Array substrate and display device including the array substrate

Abstract

The invention discloses an array substrate and a display device including the array substrate. The array substrate includes a substrate, a first transistor and an optical modulation layer. The first transistor is disposed on the substrate and includes a first semiconductor layer with a first channel region. A first gate electrode is disposed corresponding to the first semiconductor layer, and a first source electrode and a first drain electrode are respectively electrically connected to the first semiconductor layer. A first space exists between the first source electrode and the first drain electrode, and the first channel region is disposed corresponding to the first space. A first insulating layer is disposed between the first semiconductor layer and the first gate electrode, and a second insulating layer covers the first source electrode, the first drain electrode and the first channel region. The optical modulation layer is disposed on the second insulating layer, wherein the optical modulation layer at least partially overlaps with the first channel region, and the optical density (OD) value of the optical modulation layer is between 0.1 and 6.

Description

technical field [0001] The present invention relates to a display technology, and in particular to an array substrate with an optical modulation structure and a display device. Background technique [0002] In recent years, flat panel displays have been widely used in electronic devices (such as mobile phones and portable computers) due to their thin, light, small size and low power consumption. Existing flat panel displays include liquid crystal displays (liquid crystal displays, LCDs) and organic light-emitting diodes (organic light-emitting diodes, OLEDs) displays. [0003] In the above-mentioned array substrate of the flat panel display, a thin film transistor (thin film transistor, TFT) is generally used as a switching element for controlling a pixel area and as a driving element in a driving circuit. Recently, thin film transistors using metal oxide semiconductors as active layers (or channel layers) have attracted attention due to their high mobility and high transmi...

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Problems solved by technology

[0004] However, the above-mentioned metal oxide semiconductors (for example, indium gallium zinc oxide (IGZO)) are likely to affect the characteristics of thin film transistors (for example, the threshold voltage (threshold voltage)) due to light irradiation, thereby reducing the flat panel display. quality

Although the current array substrate uses the metal gate of the thin film transistor as the light-shielding layer of the backlight source, it cannot effectively block the light from reaching the channel layer.

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