Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor device, display apparatus, method of manufacturing semiconductor device and method of manufacturing display apparatus

A technology of semiconductors and oxide semiconductors, applied in semiconductor/solid-state device manufacturing, semiconductor devices, static indicators, etc., can solve problems such as the decline in productivity of semiconductor devices, and achieve the effect of suppressing the decline in productivity

Pending Publication Date: 2018-03-20
TIANMA MICRO ELECTRONICS
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, this may lead to a decrease in the productivity of the semiconductor device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device, display apparatus, method of manufacturing semiconductor device and method of manufacturing display apparatus
  • Semiconductor device, display apparatus, method of manufacturing semiconductor device and method of manufacturing display apparatus
  • Semiconductor device, display apparatus, method of manufacturing semiconductor device and method of manufacturing display apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0052] image 3 It is a plan view showing a structural example of the semiconductor device 10 included in the pixel drive circuit. Figure 4 Is along image 3 A cross-sectional view taken along the section line IV-IV in. The semiconductor device 110 includes an insulating substrate 101, a polysilicon layer 111, a first gate insulating layer 102, a first metal layer 103, an oxide semiconductor layer 121, a second gate insulating layer 104, a second metal layer 105, and an interlayer insulating layer 106 and the third metal layer 107.

[0053] In the semiconductor device 110, the respective layers are formed on the upper surface of the insulating substrate 101 in the order described above. That is, the polysilicon layer 111 is formed on the insulating substrate 101. A first gate insulating layer 102 is formed on the polysilicon layer 111. A first metal layer 103 and an oxide semiconductor layer 121 are formed on the first gate insulating layer 102. A second gate insulating layer...

Embodiment approach 2

[0072] In this embodiment, a structure in which a region having a locally high hydrogen concentration is formed near the interface of the first gate insulating layer 102 or the oxide semiconductor layer 121 will be described.

[0073] Figure 10A to Figure 10C , Figure 11A to Figure 11C with Figure 12A to Figure 12B It is a cross-sectional view showing the manufacturing process of the semiconductor device 110 according to the second embodiment. As in the first embodiment, a polysilicon layer 111 is formed on the insulating substrate 101 ( Figure 10A ), and then, a first gate insulating layer 102 is formed on the insulating substrate 101 and the polysilicon layer 111 ( Figure 10B ). In Embodiment 2, the first gate insulating layer 102 is made of SiO x constitute.

[0074] The gate 112 of the first transistor 11 is formed on the first gate insulating layer 102, the same steps S4 and S5 as described above are performed, and then the hydrogenation step ( Figure 10C ). In the hydr...

Embodiment approach 3

[0094] Embodiment 3 (Old Embodiment 2)

[0095] The present embodiment relates to a structure in which a second interlayer insulating layer 1041 is formed between the first gate insulating layer 102 and the second gate insulating layer 1042. Figure 14 It is a plan view showing a structural example of the semiconductor device 110 included in the pixel driving circuit. Figure 15 Is along Figure 14 A cross-sectional view taken along the section line XV-XV. in Figure 14 with Figure 15 In, and image 3 with Figure 4 The constituent members similar to those of Embodiment 1 shown in the first embodiment are denoted by the same reference numerals, and the description is omitted here.

[0096] In this embodiment, as Figure 15 As shown, a second interlayer insulating layer 1041 is formed on the first gate insulating layer 102 and the first metal layer 103. An oxide semiconductor layer 121 is formed on the second interlayer insulating layer 1041. A second gate insulating layer 1042 is...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Resistanceaaaaaaaaaa
Resistanceaaaaaaaaaa
Resistanceaaaaaaaaaa
Login to View More

Abstract

The invention relates to a semiconductor device, a display apparatus, a method of manufacturing the semiconductor device and a method of manufacturing the display apparatus. The semiconductor device includes an insulating substrate, a polysilicon layer, a first-gate-insulating layer, a first metal layer, an oxide-semiconductor layer, a second-gate-insulating layer, a second metal layer, a first insulating interlayer, a third metal layer, a first thin film transistor in which the polysilicon layer serves as a channel and a source, a drain and a gate are provided, and a second thin film transistor in which the oxide-semiconductor layer serves as a channel and a source, a rain and a gate are provided. The gates of the first thin film transistor and the second thin film transistor are made ofthe first and second metal layers, respectively. The sources and the drains of the first thin film transistor and the second thin film transistor are made of the third metal layer. The source or the drain of the first thin film transistor is mutually and electrically connected with the gate of the second thin film transistor.

Description

Technical field [0001] This application relates to a semiconductor device, a display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device. Background technique [0002] In display devices such as organic electroluminescence display devices and liquid crystal display devices, thin film transistors (TFTs) are used in pixel circuits. Examples of thin film transistors include a-Si (amorphous silicon) thin film transistors, low temperature polysilicon (LTPS) thin film transistors, and thin film transistors using oxide semiconductor films. [0003] The a-Si thin film transistor is a thin film transistor containing a-Si in the active layer. The LTPS thin film transistor is a thin film transistor including LTPS in an active layer. An oxide thin film transistor is a thin film transistor including an oxide semiconductor in an active layer. [0004] Here, comparing the characteristics between the LTPS thin film transistor and the oxide thin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L27/12H01L21/84G09G3/3233
CPCG09G3/3233H01L27/1225H01L27/127H01L27/1248H01L27/124H01L27/1251H10K59/1213
Inventor 竹知和重
Owner TIANMA MICRO ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com