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Determining method and device for relationship between voltage and current of memristor and terminal device

A memristor, current technology, applied in the field of electronics, can solve problems affecting the computing process of devices such as memory

Inactive Publication Date: 2018-03-23
CHINA UNITED NETWORK COMM GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The invention provides a method, device and terminal equipment for determining the relationship between the voltage and current of a memristor, which are used to solve the problem that the data obtained in the prior art is used to calculate the voltage of devices such as memories, which will affect the memory, etc. Problems with the normal calculation process of the device

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  • Determining method and device for relationship between voltage and current of memristor and terminal device
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  • Determining method and device for relationship between voltage and current of memristor and terminal device

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Embodiment Construction

[0024] In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments These are some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0025] First, the terms involved in the present invention are explained:

[0026] Memristor: It is composed of two layers of titanium dioxide film sandwiched between two platinum electrodes. Among them, the two layers of titanium dioxide film are semiconductor materials; one layer of titanium dioxide film is doped TiO (2-x) , call...

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Abstract

The invention provides a determining method and device for the relationship between the voltage and the current of a memristor and a terminal device. The method includes the steps that according to the corresponding relationship between preset time and the thickness proportion of the memristor and the current flowing through the memristor, the speed of the current moving from a doped area of the memristor to a non-doped area of the memristor is determined, wherein the thickness proportion of the memristor is a specific value between the width of the doped area of the memristor and the width ofthe non-doped area of the memristor; according to the speed and time of the current flowing through the memristor every time, the present width of the doped area of the memristor is obtained; according to the present width and the current of the doped area of the memristor, the relationship expression between the voltage and the current of the memristor is determined. When the current flows to the boundary of the doped area or the boundary of the non-doped area of the memristor, the voltage obtained after calculation of the memristor cannot be mutated, and when the memristor is applied to devices such as a storage device, the storage device and the like is conveniently treated with a voltage value of the memtistor.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to a method, device and terminal equipment for determining the relationship between voltage and current of a memristor. Background technique [0002] Memristor, also known as Memristor, is a variable resistance resistor whose resistance changes with the voltage or current applied to its two sides. When the two sides of the memristor When the forward voltage is applied, when its resistance becomes very small and close to 0, its resistance is called R ON ; On the contrary, when its two sides are negative voltage, when its resistance will increase to the maximum, its resistance is called R OFF . Memristors can be used in devices such as memories. [0003] In the prior art, when using a memristor, it is necessary to determine the voltage of the memristor, obtain the change of the resistance of the memristor according to the change of time t, and then calculate the voltage of the ...

Claims

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Application Information

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IPC IPC(8): G06F17/50
CPCG06F30/20
Inventor 王晓霞魏进武
Owner CHINA UNITED NETWORK COMM GRP CO LTD