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Method for manufacturing high-electron-mobility transistor

A high electron mobility, transistor technology, applied in crystal growth, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., can solve problems such as poor step coverage, reduced component mobility, strong electron scattering, etc.

Inactive Publication Date: 2018-04-27
TAIWAN SEMICON MFG CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition to this, films prepared by MOCVD have poor step coverage when deposited on structures with high aspect ratios such as fin structures
Thus, it is generally difficult to grow III-V compound semiconductor heterostructures by MOCVD on the sidewalls of nanoscale fins.
Poor interface quality at sidewalls can cause strong electron scattering and reduce device mobility

Method used

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  • Method for manufacturing high-electron-mobility transistor
  • Method for manufacturing high-electron-mobility transistor
  • Method for manufacturing high-electron-mobility transistor

Examples

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Embodiment Construction

[0034] It should be understood that the following disclosure provides many different implementations, or examples, for implementing different features of the disclosure. Specific implementations or examples of components and arrangements are described below to simplify the present disclosure. Of course, these embodiments or examples are only examples and are not intended to be limiting. For example, the dimensions of an element are not limited to the disclosed ranges or values, but may depend on process conditions and / or desired properties of the element. In addition, in the following description, forming the first feature on the second feature or on the second feature may include the embodiment that the first feature and the second feature are formed in direct contact, and may also include the embodiment that the first feature and the second feature may be formed between the first feature and the second feature. An embodiment in which an additional feature is formed between ...

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Abstract

In a method of manufacturing a high-electron mobility transistor, a first Group III-V semiconductor layer is formed on a substrate. The first Group III-V semiconductor layer is patterned to form a finand a recessed surface. A second Group III-V semiconductor layer is formed to cover a top surface and all side surfaces of the fin and the recessed surface. The second Group III-V semiconductor layeris formed by a plasma-enhanced atomic layer deposition, in which a plasma treatment is performed on every time an as-deposited mono-layer is formed.

Description

technical field [0001] The present disclosure relates to III-V semiconductor layers, III-V semiconductor devices such as high-electron mobility transistors (HEMTs), and methods of manufacturing the same. Background technique [0002] High-electron mobility transistors (HEMTs) based on the heterostructure of two III-V compound semiconductors are characterized by large energy band shifts and polarization-induced charges at the heterointerfaces. Exhibits excellent two-dimensional electron gas (2DEG) properties, leading to high thin-layer concentration and high mobility. If the Group III-V semiconductor layer is formed by MOCVD (Metal Organic Chemical Vapor Deposition), a high growth temperature is generally required. In addition, films prepared by MOCVD have poor step coverage when deposited on structures with high aspect ratios, such as fin structures. Thus, it is generally difficult to grow III-V compound semiconductor heterostructures by MOCVD on the sidewalls of nanoscale...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/335H01L29/10
CPCH01L21/0254H01L21/02631H01L21/02664H01L29/1033H01L29/66462C30B25/02C30B25/18C30B29/406C23C16/45542C23C16/303H01L29/66795H01L29/7851H01L29/7786H01L29/7789H01L29/0657H01L29/2003H01L29/42356H01L21/0262H01L21/02458H01L21/0242C23C16/4408C23C16/45536H01L21/02634H01L29/205H01L29/7787
Inventor 陈敏璋李伟豪施奂宇
Owner TAIWAN SEMICON MFG CO LTD