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Method of manufacturing memory device

A storage device and area technology, applied in semiconductor devices, electrical solid state devices, semiconductor/solid state device manufacturing, etc., can solve problems such as the difficulty of highly integrated semiconductor devices

Active Publication Date: 2021-09-21
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, new exposure techniques and / or expensive exposure techniques can be used to form fine patterns, making highly integrated semiconductor devices difficult

Method used

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  • Method of manufacturing memory device
  • Method of manufacturing memory device
  • Method of manufacturing memory device

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0010] Example embodiments of the inventive concept will be described in detail below together with the accompanying drawings. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0011] figure 1 is a plan view illustrating a semiconductor memory device according to example embodiments of the inventive concepts. Figure 2 to Figure 5 , Figure 6A , Figure 6B and Figure 7 to Figure 10 is along figure 1 Cross-sectional views taken along lines AA', BB', and CC' of , illustrating a method of manufacturing a semiconductor memory device according to example embodiments of the inventive concepts.

[0012] refer to figure 1 and figure 2 , a substrate 1 (such as a semiconductor substrate) may be provided. Substrate 1 can be formed of, for example, single crystal silicon. The substrate 1 may include a first area CAR, a second area NMOS, and a third area PMOS. The first area CAR may be a cell array area in which...

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PUM

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Abstract

A method of fabricating a memory device is provided. The method may include forming a mask pattern including a plurality of linear portions parallel to each other and extending on the first region of the substrate. The mask pattern may extend on the second region of the substrate. The method may further include forming a plurality of word line regions in the first region using the mask pattern as a mask, forming a plurality of word lines respectively in the plurality of word line regions, and removing the mask pattern from the second region to expose second area. The mask pattern may remain on the first region after the mask pattern is removed from the second region. The method may further include forming a channel epitaxial layer on the second region while using the mask pattern as a barrier for growth of the channel epitaxial layer on the first region.

Description

technical field [0001] The inventive concept relates to a method of manufacturing a semiconductor memory device. Background technique [0002] Semiconductor devices are considered an important factor in the electronics industry due to their small size, multifunctionality, and / or low manufacturing cost. With the remarkable development of the electronics industry, semiconductor devices are being highly integrated. For high integration of semiconductor devices, line widths of patterns of semiconductor devices are being reduced. However, new exposure techniques and / or expensive exposure techniques may be used to form fine patterns, so that highly integrated semiconductor devices may be difficult. Therefore, various studies have been conducted on new integration techniques recently. [0003] In addition, the performance of transistors on peripheral circuit areas other than the cell array area may also be important to the overall performance of the semiconductor memory device. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8238H01L27/092H10B12/00
CPCH01L21/8238H01L21/823807H01L27/092H10B12/315H10B12/34H10B12/053H10B12/485H10B12/09H10B12/50H10B12/033H10B12/482H01L21/0337H01L21/0274H01L21/02142H01L21/02293H01L21/76877H10B12/488
Inventor 李基硕金大益金根楠金奉秀朴济民尹灿植黄有商
Owner SAMSUNG ELECTRONICS CO LTD