Statistical model of flicker noise and extraction method thereof

A flicker noise, statistical model technology, applied in the direction of calculation, design optimization/simulation, special data processing application, etc., can solve problems such as unrealistic, and achieve the effect of practical statistical model

Active Publication Date: 2018-05-11
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] 1. All MOS devices use the same distribution coefficient, which is not realistic;

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Statistical model of flicker noise and extraction method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0055] The implementation of the present invention is described below through specific examples and in conjunction with the accompanying drawings, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific examples, and various modifications and changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0056] A kind of flicker noise statistical model of the present invention is on the basis of existing only consideration device DC IV (direct current voltage and current) and simple noise statistical model (promptly draw noia_tt of different devices at this moment, noib_tt noic_tt), has added different types and The correlation statistics of devices with different gate oxide thicknesses and ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a statistical model of flicker noise and an extraction method thereof. On the basis of an original statistical model, the correlation statistics of devices with different typesand different gate-oxide thicknesses and the influence coefficients of the flicker noise on the statistical coefficients of the devices are added, and then the statistical model parameters of the flicker noise are adjusted, so that the adjusted statistical model of the flicker noise can more accurately characterize the relationship with the flicker noise of the devices.

Description

technical field [0001] The invention relates to the field of integrated circuits, in particular to a flicker noise statistical model and an extraction method thereof. Background technique [0002] With the continuous advancement of semiconductor manufacturing technology, the manufacturing process of commercial CMOS process devices has developed to deep submicron, the size of components has been continuously reduced, the complexity of integrated circuit structure and layout has continued to increase, devices do not match each other, and different chips The phenomenon of fluctuations in device performance between devices is also becoming more and more serious, which affects the performance of RF / analog integrated circuits to a certain extent, and even causes the circuit to fail to work normally. The mismatch and fluctuation of device characteristics are mainly due to random and uncontrollable changes in the process of production. The flicker noise is the noise generated by th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
CPCG06F30/20G06F30/398
Inventor 吴俊徐商干兵俞柳江张瑜
Owner SHANGHAI HUALI MICROELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products