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Reference current generation circuit and reference current generation method

A technology of reference current and circuit generation, applied in the field of memory, can solve problems such as a lot of workload, time-consuming and laborious, and achieve the effect of accurate reference current and workload saving

Pending Publication Date: 2018-06-22
珠海博雅科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method requires a lot of work, time-consuming and labor-intensive

Method used

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  • Reference current generation circuit and reference current generation method
  • Reference current generation circuit and reference current generation method
  • Reference current generation circuit and reference current generation method

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Embodiment Construction

[0024] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown in the drawings.

[0025] In the following, many specific details of the present invention, such as structures, materials, dimensions, processes and techniques of components, are described for a clearer understanding of the present invention. However, the invention may be practiced without these specific details, as will be understood by those skilled in the art.

[0026] figure 1 A schematic structural diagram of a storage device in the prior art is shown.

[0027] Such as figure 1 As shown, the storage device 1000 includes a reference current generation circuit 1100 , a control circuit 1200 , a control voltage generation circuit 1300 , ...

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Abstract

The invention discloses a reference current generation circuit and a reference current generation method. The reference current generation circuit comprises a current generation unit used for generating a reference current according to a count value, a correction unit used for storing a preset value and providing a readout current according to the preset value, a current comparison unit used for comparing the reference current and the readout current to obtain a read value, and a control unit used for providing the count value according to the preset value and the read value, wherein the reference current generation circuit has a calibration mode and a normal working mode; in the calibration mode, the control unit generates and adjusts the count value according to the read value and the preset value; and in the normal working mode, the current generation unit generates the reference current according to the adjusted count value. The reference current can be automatically corrected.

Description

technical field [0001] The present invention relates to the technical field of memory, and more particularly to a reference current generation circuit and a reference current generation method. Background technique [0002] In the information age, information storage is one of the most important technical contents in information technology. Various types of flash memories are used more and more widely. [0003] Flash memory uses a sense amplifier to compare the current flowing through the memory cell with a reference current to implement operations such as reading and verifying the flash memory. This method is called a current comparison type readout method. With the development of flash memory technology, the current difference between the memory cells in the erased state and the programmed state used for reading becomes smaller and smaller, which requires higher and higher reference currents. [0004] In the prior art, a reference memory cell is selected, and a reference...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/02G11C29/50
CPCG11C29/028G11C29/50G11C2029/5006
Inventor 马亮张登军李迪刘大海闫江张亦锋杨小龙
Owner 珠海博雅科技股份有限公司