Laterally Diffused Metal Oxide Semiconductor Field Effect Transistor
A technology of oxide semiconductors and field effect transistors, applied in semiconductor devices, electrical components, circuits, etc., can solve problems that affect product performance
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Embodiment 1
[0027] figure 1 It is a schematic diagram of the structure of the laterally diffused metal-oxide-semiconductor field effect transistor of Embodiment 1, including a substrate 101 of the second conductivity type, a drift region 102 of the first conductivity type on the substrate 101, and a second conductivity type on the substrate 101. type channel region 103, the drain region 110 of the first conductivity type on the surface of the drift region 102, and the source region on the surface of the channel region 103 (in this embodiment, the first conductivity type doped region 111 and the second conductivity type doped region 111 and the second conductivity type doped region 112 ), the first field oxygen layer 104 between the drain region 110 and the source region, and the second field oxygen layer 104 a located on the side of the channel region 103 away from the drain region 110 . It should be noted that the side of the channel region 103 that is far away from the drain region 110 ...
Embodiment 2
[0034] figure 2 It is a schematic diagram of the structure of the laterally diffused metal-oxide-semiconductor field effect transistor of Embodiment 2. The main difference between it and Embodiment 1 is that, except for the channel region 103 located between the first field oxygen layer 104 and the second field oxygen layer 104a Outside (the source region is disposed in the channel region 103 ), a channel region 103 a is also disposed under the first field oxide layer 104 and in the drift region 102 . Setting the channel region 103 a can assist the depletion of the drift region 102 , thereby increasing the concentration of N-type impurities in the drift region 102 and reducing the on-resistance of the device.
[0035] In this embodiment, the channel region 103 and the channel region 103a are formed in the same step, so as to save the manufacturing process and the number of photolithography plates.
Embodiment 3
[0037] image 3 It is a schematic structural diagram of a laterally diffused metal-oxide-semiconductor field effect transistor in Embodiment 3. The main difference between it and Embodiment 2 is that the channel region 103a is a plurality of discrete structures. Since the closer to the source region, the greater the need for depletion of the auxiliary drift region 102, in other words, the closer to the drain region 110, the lower the need for depletion of the auxiliary drift region 102, so the channel region 103a does not need to be depleted as A strip is provided as in Example 2, but a structure in which the doping concentration (ie, the concentration of P-type impurities) gradually decreases from the source region to the drain region 110 can be provided as the corresponding channel region. Considering the implementation difficulty in manufacturing, the channel region 103 a of the discrete structure can be set so that the closer to the source region, the denser the discrete s...
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