Semiconductor x-ray detector
An X-ray and detector technology, applied in the field of semiconductor X-ray detectors, can solve the problems of difficult and impossible production of detectors with a large area and a large number of pixels
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[0063] Figure 1A A semiconductor X-ray detector 100 according to an embodiment is schematically shown. The semiconductor X-ray detector 100 may include an X-ray absorbing layer 110 and an electronic device layer 120 (eg, ASIC) for processing and analyzing electrical signals generated in the X-ray absorbing layer 110 by incident X-rays. In an embodiment, the semiconductor X-ray detector 100 does not include a scintillator. The X-ray absorbing layer 110 may include semiconductor materials such as silicon, germanium, GaAs, CdTe, CdZnTe or combinations thereof. Semiconductors can have high mass attenuation coefficients for x-ray energies of interest. The X-ray absorbing layer 110 may include one or more diodes (eg, p-i-n or p-n) formed from the first doped region 111 , one or more discrete regions 114 of the second doped region 113 . The second doped region 113 may be separated from the first doped region 111 by an (optional) intrinsic region 112 . The discrete portions 114 ar...
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