A kind of high temperature annealing method of patterned thin film

Abstract

In order to overcome the cracking after the high-temperature annealing of a patterned film in the prior art, a high-temperature annealing method for a patterned film is provided, comprising the stepsof: S1, forming a liquid patterned film liquid on a substrate, wherein the patterned film liquid comprises a film forming material and a solvent; S2, pre-annealing the patterned film liquid at a pre-annealing temperature to obtain a film precursor, wherein the pre-annealing temperature is 4 to 5 degree centigrade lower than the boiling point of the solvent; S3, subjecting the film precursor to a transition annealing treatment at a transition annealing temperature to obtain a film transition body, wherein the transition annealing temperature is lower than the target annealing temperature by 100to 150 degree centigrade; S4, annealing the film transition body at a target annealing temperature, and then cooling the film transition body to obtain a film. The film prepared by the high-temperature annealing method provided by the invention does not break and has high quality. The method provides good supporting conditions for improving the performance of the patterned film.

Description

technical field [0001] The invention belongs to the field of preparation of nano-optoelectronic materials, in particular to a high-temperature annealing method for patterned thin films. Background technique [0002] Printed electronics is the preparation of specific functional materials into liquid ink, according to the design requirements of electronic devices and product performance, printing technology, to achieve the production of electronic components and system products characterized by large area, flexibility, and light film. Although the resolution and integration of printed electronic components and products cannot reach the level of traditional silicon-based microelectronic devices, printed electronic technology has its own unique advantages, which are superior to the limitations of traditional technology and save Removing cumbersome processes such as exposure, development, and etching, has the advantages of low energy consumption, less material waste, green and po...

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a method for high-temperature annealing of patterned films for the problem of cracking after high-temperature annealing of patterned films in the prior art

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