A sma patch diode

Abstract

The invention discloses an SMA paster diode comprising a paster diode body, a packaging circular disk and a paster diode connecting strip. A groove is formed in the top surface of the paster diode; aluminum piece connecting leads are arranged at the sides of two ends of the paster diode; aluminum piece connectors are arranged at sides, opposite to the paster diode, of the end portions of the aluminum piece connecting leads; copper pieces are fixedly arranged at the bottoms of the aluminum piece connecting leads by welding; and copper piece connectors are arranged at inner sides, opposite to the aluminum piece connectors, of the end portions of the copper pieces. According to the invention, with combination of the aluminum piece connecting leads and the copper lines, the production cost islowered and the rigidity performance is enhanced while the conductivity of the original leads is kept; the high-low-temperature-resistant range is extended; deformation is prevented; the quality of the diode in use is ensured; the post-stage maintenance and replacement frequency is reduced; the cost is saved; and the operation becomes simple and convenient.

Description

Technical field [0001] The present invention belongs to the field of diode, and more particularly to a SMA patch diode. Background technique [0002] Patch diodes are also known as crystal diodes, referred to as diodes, and early vacuum electronics; it is an electronic device having one-way conductive current. There is a PN junction between the semiconductor diode, such an electronic device includes a directional of the in-directional current in accordance with the direction of the external voltage. In general, the patch crystal diode is a P-N junction that is formed by a p-type semiconductor and n-type semiconductor sinter. A spatial charge layer is formed on both sides of its interface to form a self-construction electric field. When the external voltage is equal to zero, since the concentration of the P-N junction causes the diffusion current and the drift current caused by the self-built electric field, it is in an electrical equilibrium state, which is also a diode character...

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Problems solved by technology

[0008] The purpose of the present invention is to provide a kind of SMA patch diode, to solve the diode proposed in the above background technology when in use because the general lead is connected by pure copper, thus the manufacturing cost is relatively high, and at the same time due to the influence of the characteristics of pure copper, Its rigidity is poor, and its range of high and low temperature resistance is narrow, and it is prone to deformation, which will have a certain impact on the use of diodes, which will increase the frequency of maintenance and replacement in the later period, resulting in waste of cost, and it is more difficult to operate. Due to the complexity of the installation environment and high temperature faults during use, it is easy to cause its surface to be deformed or burned due to a short circuit, resulting in large-scale damage, and the cost of replacement and maintenance is greatly increased. When the diode is stored and fixed, its There is no protective device at the observation port of the packaging disc. When exposed to the air for a long time, the diode connection belt is easy to adhere to more dust, and it is more cumbersome to clean up, which will have a certain impact on later use and the diode in production. During installation, because it is generally bonded or connected by a built-in small post, there are great difficulties in the later disassembly process, and the small post is easy to break during use, resulting in the inability to connect and fix question

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