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MOS tube drive circuit, drive chip and motor

A technology of MOS tube and driving circuit, applied in the field of driving circuit, can solve the problems of unfavorable high-end N-type MOS tube conduction and disconnection, etc.

Active Publication Date: 2020-02-14
FORTIOR TECH SHENZHEN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The main purpose of the present invention is to propose a MOS tube drive circuit, aiming at solving the problem that when the source of the high-end N-type MOS tube is connected to the motor, the voltage of the motor changes greatly during the working process, which is not conducive to controlling the high-end N-type MOS tube. The problem of the conduction and disconnection of the tube

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  • MOS tube drive circuit, drive chip and motor
  • MOS tube drive circuit, drive chip and motor

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Embodiment Construction

[0020] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0021] It should be noted that if there is a directional indication (such as up, down, left, right, front, back...) in the embodiment of the present invention, the directional indication is only used to explain the position in a certain posture (as shown in the accompanying drawing). If the specific posture changes, the directional indication will also change accordingly.

[0022]In addition, if there are descriptions involving "first", "second" and s...

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Abstract

The invention discloses an MOS transistor driving circuit, a driving chip and a motor. The MOS transistor driving circuit comprises a charge pump, a current source, a voltage stabilizing circuit, a phase inverting circuit, a level conversion circuit, a control circuit, a first MOS transistor and a first high-end MOS transistor, wherein the charge pump is used for forming a preset voltage difference between the input end of the charge pump and the output end of the charge pump; the current source is used for providing a current source for the MOS transistor driving circuit; the voltage stabilizing circuit is used for forming a preset voltage difference between the source of the first MOS transistor and the output end of the MOS transistor driving circuit; the level conversion circuit is used for performing level conversion and backward processing on the input control signal to enable the control signal, which is already subjected to the level conversion and backward processing, to be matched with the phase inverting circuit; the phase inverting circuit is used for performing backward processing on the voltage output by the level conversion circuit; and the control circuit is used for controlling switch on and switch off of the first high-end MOS transistor according to the voltage output by the phase inverting circuit. The MOS transistor driving circuit can reliably control theswitch on and switch off of the high-end N type MOS transistor.

Description

technical field [0001] The invention relates to the technical field of drive circuits, in particular to a MOS transistor drive circuit, a drive chip and a motor. Background technique [0002] In the brushless DC motor drive circuit, MOS tubes are usually used as switch tubes. When the MOS tube is turned on as a switch tube, the MOS tube works in a linear region. The on-resistance of the MOS tube directly affects the working efficiency of the MOS tube. When the on-resistance of the MOS tube is too large, it will cause the chip to overheat, and sometimes even burn the chip directly. Moreover, the area occupied by the existing P-type MOS transistor is relatively large. Generally, the area of ​​the MOS transistor will determine the size of the chip area, thereby affecting the manufacturing cost of the chip. That is, the larger the chip area, the higher the cost of manufacturing the chip. At the same time, the area occupied by the MOS tube in the chip will also affect the para...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/088H02P6/08
CPCH02M1/088H02P6/085
Inventor 胡术云崔瑜强毕磊毕超
Owner FORTIOR TECH SHENZHEN