Method based on Monte Carlo stimulation to assist with control of ion implantation time

A Monte Carlo simulation and auxiliary control technology, applied in chemical instruments and methods, special data processing applications, crystal growth, etc., can solve the problems of low controllability of oxygen vacancies, SRIM simulation can not get the relationship between time and concentration, etc. Achieve the effect of auxiliary control

Active Publication Date: 2018-09-11
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

[0005] In view of the above-mentioned problems or deficiencies, in order to solve the technical problems that the controllability of obtaining oxygen vacancies through ion implantation is not high in the experiment and the relationship between time and concentration cannot be obtained by SRIM simulation, the present invention provides an auxiliary control ion based on Monte Carlo simulation. method of injecting time

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  • Method based on Monte Carlo stimulation to assist with control of ion implantation time
  • Method based on Monte Carlo stimulation to assist with control of ion implantation time
  • Method based on Monte Carlo stimulation to assist with control of ion implantation time

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[0018] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. Set the experimental conditions: the implantation energy of argon ions is 300eV, and the implantation dose per second is 10 15 ion / cm 2 , taking 1 second as a unit time, when the oxygen vacancy concentration reaches 10% of the initial strontium titanate atomic concentration, the crystal is considered to be amorphized.

[0019] First, use SRIM to simulate argon ion implantation into strontium titanate to obtain the number of vacancies in each atom, and then calculate the oxygen vacancy concentration V in the first unit time 1 and the thickness of the amorphized layer D 1 = 12.266 Angstroms. Oxygen vacancies are distributed as figure 1 The hollow curve is shown.

[0020] According to the sputtering ratio of the simulation results in the previous step, calculate the density ρ of strontium titanate after etching 1 =4.886g / cm 3 and thickness d...

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Abstract

The invention belongs to the field of ion implantation application and specifically relates to a method based on Monte Carlo stimulation to assist with control of ion implantation time. According to the method disclosed by the invention, SRIM is utilized as foundation to simulate that argon ions are implanted into strontium titanate crystal, each unit time is utilized as a segment, repeated iterative computation is combined to control factors of ion implantation time, ion implantation dosage or the like to accurately control an oxygen vacancy concentration, and control time with experimental significance is obtained. Therefore, the problem that SRIM simulation cannot set time parameters is solved; time is divided into each unit time, so that solving is continuously promoted through the unit time; finally, a piece of time and non-crystallizing layer thickness relationship is obtained to assist with control of ion implantation dosage in an actual experiment process. The situation that implantation time is decided by only relying on experience of an experimenter in an experiment is avoided, and the method is a set of simulation calculation method with actual experimental significance.

Description

technical field [0001] The invention belongs to the application field of ion implantation, and specifically relates to a method for assisting in controlling ion implantation time based on Monte Carlo simulation. Background technique [0002] Monte Carlo method, also known as random sampling or statistical experiment method. Its basic idea is to obtain the frequency of occurrence of something or the average value of this random variable through experiments, so as to obtain the solution of this problem. Since traditional empirical methods cannot approximate real physical processes, it is difficult to obtain satisfactory results from them. The Monte Carlo method can truly simulate the actual physical process, so the results obtained are very consistent with the actual situation. Commonly used Monte Carlo programs include MORSE, EGS, SRIM, etc. As a set of open source ion implantation simulation software, SRIM is currently the most widely used ion implantation simulation soft...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/32C30B31/22G06F17/50
CPCC30B29/32C30B31/22G06F30/20
Inventor 张万里王放曾慧中
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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