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35 results about "Implantation time" patented technology

Most of the time, implantation occurs about nine days after ovulation, but it can occur as early as seven days or as late as 12 days after ovulation. Once implantation is complete, the cervix becomes closed with a mucus plug.

Vena cava filter

ActiveCN104352287AGood effect on filtering thrombusEasy to fixBlood vessel filtersImplantation timeAlloy
The invention discloses a vena cava filter which is placed at the position of an inferior vena cava between kidney venas and iliac venas, and is formed by integrally cutting a nickel-titanium alloy pipe with laser. The filter comprises connecting rods, a top layer filter screen, a middle layer filter screen and a bottom layer filter screen, wherein the top layer filter screen, the middle layer filter screen and the bottom layer filter screen are jointly formed in a cage-shaped structure, the middle layer filter screen is positioned between the top layer filter screen and the bottom layer filter screen, and is formed by inwards bending a plurality of branches which are cut; the top layer filter screen and the middle layer filter screen can capture and intercept larger thrombosis, and the bottom layer filter screen can capture and intercept smaller thrombosis; the surfaces of the filter screens of the three layers are wrapped with PTFE (poly tetra fluoro ethylene) films; the connecting rods are in contact with vascular walls, are connected with the cage-shaped structure, can be divided into more than two branches, are formed by expanding, and are wrapped with the PTFE films. The vena cava filter provided by the invention has the advantages that the effect of filtering the thrombosis is excellent, the vena cava filter can be repeatedly and firmly positioned, the implantation time can be prolonged, the vena cava filter can be recovered, and the endothelialization effect can be delayed.
Owner:SHENZHEN KYD BIOMEDICAL TECH CO LTD

Image-lead after-loading interposition arthroplasty treatment system

The invention provides an image-lead after-loading interposition arthroplasty treatment system. The image-lead after-loading interposition arthroplasty treatment system comprises interposition arthroplasty needle bodies, wherein each interposition arthroplasty needle body comprises a needle wall for inserting into target area tissue and a regulating locking piece which is used for guiding the corresponding interposition arthroplasty needle body to insert and can lock the position of the corresponding interposition arthroplasty needle body. According to the image-lead after-loading interposition arthroplasty treatment system disclosed by the invention, the interposition arthroplasty position and the interposition arthroplasty angle of each interposition arthroplasty needle body can be adjusted and selected in advance through the corresponding regulating locking piece; in the interposition arthroplasty process, each interposition arthroplasty needle body is led to be inserted to the target tissue in the direction limited by the corresponding regulating locking piece, so that the operation steps are simplified, the implantation time of the needle wall is saved, and the accuracy of target treatment is improved; and in addition, the image-lead after-loading interposition arthroplasty treatment system is simple in structure, convenient to operate, low in using cost, and suitable for clinical large-range popularization and application.
Owner:SHINVA MEDICAL INSTR CO LTD

Wireless pacemaker conveying catheter device controlled to turn by using memory alloy wires and production method

InactiveCN108031006ARealize the bending functionOptimizing Implantation Path ParametersElectrotherapyMedical devicesImplantation timeControl system
The invention belongs to the field of interventional medical apparatuses, and particularly relates to a wireless pacemaker conveying catheter device controlled to turn by using memory alloy wires anda production method. The conveying catheter device structurally comprises a control handle, a conveying catheter, a specific device at a far end of the catheter and a control system. The wireless pacemaker conveying catheter device is mainly characterized in that electric currents passing through the memory alloy wires are integrally controlled through the handle; the change of a different lengthof each alloy wire is realized to realize a bending function of the conveying catheter; moreover, a bending angle is displayed on a display screen of the control system, so as to realize the digital control of the bending angle, wherein the control system has data recording and uploading function, and can be used for recording and uploading an implantation path of a medical device, so as to optimize the implantation path, wherein the conveying catheter is produced through a way of firstly gluing and then carrying out thermal shrinkage in the production method. The wireless pacemaker conveyingcatheter device can be used for accurately, conveniently and quickly realizing the digital control of the bending function of the catheter, is used for shortening an implantation time and improving implantation safety, and has a better application prospect in the conveyance of a wireless pacemaker.
Owner:张海军

Method for monitoring corrosion degradation of bioabsorbable implant and for semi-quantification of relative weight loss ratio of corrosion product thereof

The invention provides a method for monitoring the corrosion degradation of a bioabsorbable implant and for the semi-quantification of the relative weight loss ratio of the corrosion degradation of the implant and a corrosion product of the implant. The monitoring method comprises the following steps: performing MR imaging of the implantation part of an individual with an implanted bioabsorbable implant at the predetermined at least two implantation time points respectively; and with the same imaging sequence, comparing the artifact sizes of the MRI images of the implant at the time points, wherein if the artifact size is gradually reduced along with the time increase, the corrosion degradation degree of the implant is deepened. The semi-quantification method comprises the following steps: with the same imaging sequence, performing MR imaging of the implant in the individual or a corrosion product thereof at different implantation time points; selecting an index plane, and establishing a function relation curve between the maximum artifact size value of the index plane and the weight loss ratio of the implant body or corrosion product thereof at the time points; and determining the relative weight loss ratio of the implant or corrosion product thereof according to the function relation curve and the monitored artifact size value of the implant or corrosion product thereof.
Owner:LIFETECH SCIENTIFIC (SHENZHEN) CO LTD

Bidirectional transient voltage suppressor diode and manufacturing method thereof

The invention provides a bidirectional transient voltage suppressor diode and a manufacturing method thereof. The manufacturing method at least comprises the steps of: 1) providing a substrate of a first doping type, wherein the substrate comprises a first surface and a second surface; 2) forming a first epitaxial layer of the first doping type on the first surface of the substrate of the first doping type; 3) forming an epitaxial layer of a second doping type on the surface of the first epitaxial layer of the first doping type; 4) forming a second epitaxial layer of the first doping type on the surface of the epitaxial layer of the second doping type; 5) forming a first electrode on the surface of the second epitaxial layer of the first doping type; 6) and forming a second electrode on the second surface of the substrate of the first doping type. According to the manufacturing method, only the front surface of the substrate of the first doping type is processed, and the manufacturing process is simple; meanwhile, the number of epitaxial growing and implantation times of each epitaxial layer can be selected according to voltage withstand levels of the diode, so as to obtain uniform concentration distribution.
Owner:CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD

Electrical connector and manufacturing method thereof

The invention discloses a manufacturing method of an electrical connector. The manufacturing method comprises the following steps of: S1, providing a substrate, wherein the substrate is provided witha plurality of conductive parts and a plurality of through holes, and the through holes penetrate through the substrate up and down; S2, placing the substrate in a mold, injecting liquid plastic intothe mold, enabling the liquid plastic to flow into the plurality of through holes, and forming a connector and a plurality of supporting members integrally connected by the connector after the liquidplastic is cooled, wherein the supporting members are contained in the corresponding through holes and upwardly protrude out of the substrate, and the connector is located below the substrate; S3, taking the substrate, the plurality of supporting members and the connector out from the mold; and S4, forming a plurality of first terminals, wherein each of the first terminals is provided with a firstconduction part and a first contact part for upwardly conducting the first conduction part, the plurality of first guiding parts are downwardly and correspondingly conducted to a plurality of conductive parts, so that the electric connector is obtained. The supporting members are integrally formed on the substrate, so that the implantation time is saved, the cost is low and the working efficiencyis improved.
Owner:DEYI PRECISION ELECTRONIC IND CO LTD PANYU

Drill point set for autologous tooth transplantation

The invention relates to the technical field of dental medical instruments, in particular to a drill point set for autologous tooth transplantation, which comprises a pioneer drill, a ball drill and a split drill; the pioneer drill comprises a drill bit, a neck rod and a drill tail; the number of the pioneer drills is several; furthermore, the drill bit on each pioneer drill is of a circular truncated cone structure; the total length of each pioneer drill is 28 mm; the length of the drill bit is 16 mm; the diameter of the end, away from the neck rod, of the drill bit is 2 mm; the tapers of the drill bits are respectively 0.2, 0.3, 0.4, 0.5, 0.6, 0.7 and 0.8; a cutting knife is arranged at the end, away from the neck rod, of the drill bit; the number of the cutting knives is several; the cutting knives are evenly distributed at the end of the drill bit; and a part of the cutting knife is positioned on the circumference of the end part of the drill bit. The drill point set can be used for rapidly preparing a tooth socket matched with a supplied tooth, so that the operation time of autogenous tooth transplantation is shortened, the trial implantation times of the supplied tooth are reduced, and the success rate of autogenous tooth transplantation is improved.
Owner:SICHUAN ACADEMY OF MEDICAL SCI SICHUAN PROVINCIAL PEOPLES HOSPITAL

Method based on Monte Carlo stimulation to assist with control of ion implantation time

ActiveCN108517559ASolve the problem that the time parameter cannot be setInjection dose controlPolycrystalline material growthDiffusion/dopingOxygen vacancyLayer thickness
The invention belongs to the field of ion implantation application and specifically relates to a method based on Monte Carlo stimulation to assist with control of ion implantation time. According to the method disclosed by the invention, SRIM is utilized as foundation to simulate that argon ions are implanted into strontium titanate crystal, each unit time is utilized as a segment, repeated iterative computation is combined to control factors of ion implantation time, ion implantation dosage or the like to accurately control an oxygen vacancy concentration, and control time with experimental significance is obtained. Therefore, the problem that SRIM simulation cannot set time parameters is solved; time is divided into each unit time, so that solving is continuously promoted through the unit time; finally, a piece of time and non-crystallizing layer thickness relationship is obtained to assist with control of ion implantation dosage in an actual experiment process. The situation that implantation time is decided by only relying on experience of an experimenter in an experiment is avoided, and the method is a set of simulation calculation method with actual experimental significance.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Preparation process of quantum energy eyesight improving and refreshing liquid

The invention discloses a preparation process of quantum energy eyesight improving and refreshing liquid, including the following steps: (1) preparing raw materials according to the formula of the eyesight improving and refreshing liquid; (2) putting a mixture A into an emulsifying pot and heating to 85 DEG C, homogenizing for 6 minutes, and stirring for 10 minutes; putting a mixture B into a water pot and heating and stirring to 85 DEG C, after the mixture B is dissolved, pumping the mixture B into the emulsifying pot, stirring at constant temperature 85 DEG C for 10 minutes, cooling to 45 DEG C, adding a mixture C, stirring and dissolving evenly, sampling at 42 DEG C for comparison plate detection, and discharging after qualification to obtain unquantified eyesight improving and refreshing liquid; (3) sending the unquantified eyesight improving and refreshing liquid into a quantum energy chamber, starting a quantum energy generator for quantum implantation of the unquantized eyesightimproving and refreshing liquid to obtain the quantum eyesight improving and refreshing liquid, wherein the quantum implantation time is 2 to 7 days; (4) canning the quantized eyesight improving andrefreshing liquid, adding magnetic sheets for magnetization, and sealing. Molecular groups in the eyesight improving and refreshing liquid of the invention is micro-molecularized, so that the permeability is better and the absorption is more easy.
Owner:李波

vena cava filter

ActiveCN104352287BGood effect on filtering thrombusEasy to fixBlood vessel filtersImplantation timeVein
The invention discloses a vena cava filter which is placed at the position of an inferior vena cava between kidney venas and iliac venas, and is formed by integrally cutting a nickel-titanium alloy pipe with laser. The filter comprises connecting rods, a top layer filter screen, a middle layer filter screen and a bottom layer filter screen, wherein the top layer filter screen, the middle layer filter screen and the bottom layer filter screen are jointly formed in a cage-shaped structure, the middle layer filter screen is positioned between the top layer filter screen and the bottom layer filter screen, and is formed by inwards bending a plurality of branches which are cut; the top layer filter screen and the middle layer filter screen can capture and intercept larger thrombosis, and the bottom layer filter screen can capture and intercept smaller thrombosis; the surfaces of the filter screens of the three layers are wrapped with PTFE (poly tetra fluoro ethylene) films; the connecting rods are in contact with vascular walls, are connected with the cage-shaped structure, can be divided into more than two branches, are formed by expanding, and are wrapped with the PTFE films. The vena cava filter provided by the invention has the advantages that the effect of filtering the thrombosis is excellent, the vena cava filter can be repeatedly and firmly positioned, the implantation time can be prolonged, the vena cava filter can be recovered, and the endothelialization effect can be delayed.
Owner:SHENZHEN KYD BIOMEDICAL TECH CO LTD

Inverted four-junction solar cell anti-displacement irradiation reinforcing method based on deep ion implantation mode

The invention discloses an inverted four-junction solar cell anti-displacement irradiation reinforcing method based on a deep ion implantation mode, belongs to the technical field of microelectronics,and aims at solving the problems that existing inverted four-junction solar cells are poor in displacement irradiation resistance under the irradiation of space charged particles and are liable to generate displacement radiation damage, so that the performance parameters of the solar cells are seriously influenced. According to the method, ions are implanted into a fourth junction active region and a third junction active region of an inverted four-junction solar cell in a simulated manner; ion energy and range information are acquired; I-V characteristics are simulated; the ion implantationamount when the change amount of the I-V characteristics from those when ions are not implanted is less than 10% is recorded; the ion implantation voltage and the ion beam current are calculated; theion implantation time is set; ion implantation is performed by adopting the set ion implantation machine, and annealing treatment is performed on the inverted four-junction solar cell after ion implantation is completed. The method is used for carrying out anti-displacement irradiation reinforcement on the inverted four-junction solar cell.
Owner:HARBIN INST OF TECH
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