Inverted four-junction solar cell anti-displacement irradiation reinforcing method based on deep ion implantation mode

An ion implantation and solar cell technology, applied in the field of microelectronics, can solve the problems of displacement radiation damage, poor anti-displacement irradiation ability, affecting the performance parameters of solar cells, etc. Effect

Inactive Publication Date: 2019-11-22
HARBIN INST OF TECH
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Problems solved by technology

[0005] The purpose of the present invention is to solve the problem that the existing inverted four-junction solar cell has poor anti-displacement irradiation ability under the irradiation of space charged particles, and is prone to displacement radiation damage, thus seriously affecting the performance parameters of the solar cell. Reinforcement method for anti-displacement irradiation of inverted four-junction solar cells based on deep ion implantation

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  • Inverted four-junction solar cell anti-displacement irradiation reinforcing method based on deep ion implantation mode
  • Inverted four-junction solar cell anti-displacement irradiation reinforcing method based on deep ion implantation mode
  • Inverted four-junction solar cell anti-displacement irradiation reinforcing method based on deep ion implantation mode

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specific Embodiment approach 1

[0042] Specific implementation mode one: the following combination figure 1 To illustrate this embodiment, the method for strengthening the anti-displacement radiation of an inverted four-junction solar cell based on the deep ion implantation method described in this embodiment, the specific process of the strengthening method is as follows:

[0043] S1. According to the structural parameters of the inverted four-junction solar cell, simulate implanting ions into the fourth-junction active region and the third-junction active region of the inverted four-junction solar cell to obtain the fourth-junction active region and the third-junction active region respectively. The ion energy and range information of implanted ions in the region;

[0044] S2. Simulate the I-V characteristics of the fourth junction active region without implanted ions and simulated implanted ions respectively, change the amount of implanted ions, so that the variation of the I-V characteristics after simul...

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Abstract

The invention discloses an inverted four-junction solar cell anti-displacement irradiation reinforcing method based on a deep ion implantation mode, belongs to the technical field of microelectronics,and aims at solving the problems that existing inverted four-junction solar cells are poor in displacement irradiation resistance under the irradiation of space charged particles and are liable to generate displacement radiation damage, so that the performance parameters of the solar cells are seriously influenced. According to the method, ions are implanted into a fourth junction active region and a third junction active region of an inverted four-junction solar cell in a simulated manner; ion energy and range information are acquired; I-V characteristics are simulated; the ion implantationamount when the change amount of the I-V characteristics from those when ions are not implanted is less than 10% is recorded; the ion implantation voltage and the ion beam current are calculated; theion implantation time is set; ion implantation is performed by adopting the set ion implantation machine, and annealing treatment is performed on the inverted four-junction solar cell after ion implantation is completed. The method is used for carrying out anti-displacement irradiation reinforcement on the inverted four-junction solar cell.

Description

technical field [0001] The invention relates to an anti-displacement radiation strengthening method for an inverted four-junction solar cell, which belongs to the technical field of microelectronics. Background technique [0002] In the 21st century, human beings are faced with the major challenge of achieving sustainable economic and social development. Under the dual constraints of limited resources and strict environmental protection requirements, economic development has become a global hot issue, and energy issues will become more prominent. In order to solve energy problems and achieve sustainable development, we can only rely on scientific and technological progress to develop and utilize renewable clean energy on a large scale. Solar energy has the advantages of large reserves, ubiquity, economical utilization, clean and environmental protection, etc. Therefore, the utilization of solar energy is becoming more and more It has been widely valued by people and has beco...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L21/265
CPCH01L21/2654H01L31/1844Y02E10/544Y02P70/50
Inventor 张延清齐春华王天琦马国亮刘超铭陈肇宇王新胜李何依周佳明霍明学
Owner HARBIN INST OF TECH
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