Bidirectional transient voltage suppressor diode and manufacturing method thereof

Abstract

The invention provides a bidirectional transient voltage suppressor diode and a manufacturing method thereof. The manufacturing method at least comprises the steps of: 1) providing a substrate of a first doping type, wherein the substrate comprises a first surface and a second surface; 2) forming a first epitaxial layer of the first doping type on the first surface of the substrate of the first doping type; 3) forming an epitaxial layer of a second doping type on the surface of the first epitaxial layer of the first doping type; 4) forming a second epitaxial layer of the first doping type on the surface of the epitaxial layer of the second doping type; 5) forming a first electrode on the surface of the second epitaxial layer of the first doping type; 6) and forming a second electrode on the second surface of the substrate of the first doping type. According to the manufacturing method, only the front surface of the substrate of the first doping type is processed, and the manufacturing process is simple; meanwhile, the number of epitaxial growing and implantation times of each epitaxial layer can be selected according to voltage withstand levels of the diode, so as to obtain uniform concentration distribution.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to a bidirectional transient voltage suppression diode and a manufacturing method thereof. Background technique [0002] Transient Voltage Suppressor Diode (TVS for short) is a PN junction semiconductor diode device formed by silicon diffusion process. When the two poles of the TVS receive a reverse transient high-energy impact, it can change the high impedance between the two poles into a low impedance in the order of 10s to 12s to absorb surge power up to several thousand watts, and make the two poles The voltage is clamped at a predetermined value, which effectively protects the precision components in the electronic circuit from being damaged by various surge pulses and static electricity. There are two types of TVS: Unidirectional TVS and Bi-directional TVS. The bidirectional TVS is equivalent to two unidirectional TVS connected in series in reverse, which can protect th...

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a bidirectional transient voltage suppressor diode and a manufacturing method thereof, which are used to solve the problem that the traditional bidirectional transient voltage suppressor diode needs to be connected to the front side of the silicon substrate in the prior art. And the problem of complex preparation process caused by simultaneous processing of the back side

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