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Low-voltage high-swing PVT insensitive bootstrap charge transmission circuit

A technology of charge transmission and low voltage, which is applied in the field of input signal swing enhanced charge signal transmission circuit, can solve the problem of no optimization space and limitation of voltage difference, and achieve the effect of overcoming the limitation of signal swing

Inactive Publication Date: 2018-11-20
HUANGSHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Under low voltage conditions, V DS occupied by 20% of V DD There is no room for optimization of the voltage dropout; V CK1n The voltage is the global reference voltage of the chip, and its theoretical maximum value can be V DD , but in practice its maximum value is also limited by the G terminal voltage, and the maximum value of the G terminal voltage can only be the power supply voltage V DD , with obvious restrictions

Method used

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  • Low-voltage high-swing PVT insensitive bootstrap charge transmission circuit
  • Low-voltage high-swing PVT insensitive bootstrap charge transmission circuit
  • Low-voltage high-swing PVT insensitive bootstrap charge transmission circuit

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Embodiment

[0029] Embodiments, the present invention will be further described in detail below in conjunction with the accompanying drawings and examples.

[0030] image 3 Shown is the structural principle diagram of the low-voltage large-swing PVT insensitive bootstrap charge transmission circuit designed by the present invention, which uses mirror control technology to control common-mode fluctuations and uses grid voltage bootstrap boosting technology to improve the swing of the input signal. Its figure 1 In the shown signal transmission circuit, a gate voltage bootstrap booster circuit is added between the source of the MOSFET S and the power supply VDD, and a mirror copy circuit is also added. The low voltage large swing PVT insensitive bootstrap charge transfer circuit includes: a charge transfer MOSFET S, a gate voltage bootstrap booster circuit, a first NMOS transistor M1, a second NMOS transistor M2, a first PMOS transistor M3, the first capacitor C1 and the second capacitor ...

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Abstract

The invention belongs to the technical field of integrated circuit design, specifically a signal transmission circuit. The low-voltage high-swing PVT insensitive bootstrap charge transmission circuitcomprises a charge transmission MOSFET S, a gate voltage bootstrap circuit, a first NMOS transistor M1, a second NMOS transistor M2, a first PMOS transistor M3, a first capacitor C1, a second capacitor C2, a charge transmission mirror MOSFET MSR, a first mirror NMOS transistor M1R, a second mirror NMOS transistor M2R, a first mirror PMOS transistor M3R , a current source I1, a voltage source V1 and an error amplifier AE. The circuit has the advantages that the problem that signal swing is limited and common mode charges are liable to be influenced by PVT fluctuation in the existing signal transmission circuit is overcome, and the circuit can be widely applied to various signal processing circuits.

Description

technical field [0001] The invention relates to an input signal swing-enhanced charge signal transmission circuit for a charge-domain pipeline analog-to-digital converter, which belongs to the technical field of integrated circuits. Background technique [0002] With the continuous development of digital signal processing technology, the digitization and integration of electronic systems is an inevitable trend. However, most signals in reality are continuously changing analog quantities, which need to be transformed into digital signals through analog-to-digital conversion before they can be input into digital systems for processing and control. Therefore, analog-to-digital converters are indispensable in future digital system design. made of. In applications such as broadband communications, digital high-definition television, and radar, systems require analog-to-digital converters with both very high sampling rates and resolutions. Portable terminal products in these app...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03M1/08
CPCH03M1/08H03M1/0845H03M1/089
Inventor 陈珍海许媛占林松刘琦宁仁霞万书芹孙剑吕海江
Owner HUANGSHAN UNIV