Electrostatic protection device

A technology of electrostatic protection and devices, which is applied in the field of electrostatic protection devices, can solve problems such as difficulty in guarantee, influence on application, high maintenance voltage, etc., and achieve the effect of reducing trigger voltage, increasing maintenance voltage, and increasing static discharge path

Active Publication Date: 2018-11-27
HUNAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above situation, the purpose of the present invention is to solve the problem in the prior art that the existing electrostatic protection devices are difficult to ensure a higher sustain voltage, which affects the practical application to a certain extent

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Embodiment Construction

[0021] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. Several embodiments of the invention are shown in the drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of the present invention will be thorough and complete.

[0022] It should be noted that when an element is referred to as being “fixed on” another element, it may be directly on the other element or there may be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or intervening elements may also be present. As used herein, the terms "vertical," "horizontal," "left," "right," "upper," "lower," a...

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Abstract

The invention provides an electrostatic protection device comprising a substrate, wherein a deep N trap is arranged in the substrate, a first P trap, a first N trap and a second P trap are sequentially arranged in the deep N trap from left to right, a first P+ injection region, a first N+ injection region and a second N+ injection region are sequentially arranged in the first P trap from left to right, a third N+ injection region, a fourth N+ injection region and a fourth P+ injection region are sequentially arranged in the second P trap from left to right, the second P+ injection region is bridged between the first P trap and the first N trap, the third P+ injection region is bridged between the first N trap and the second P trap, the first P+ injection region and the first N+ injection region are both connected with an anode, and the fourth P+ injection region and the fourth N+ injection region are both connected with a cathode. According to the electrostatic protection device, the maintaining voltage can be improved, the trigger voltage is reduced, and the ESD robustness of the device is improved.

Description

technical field [0001] The invention relates to the technical field of electrostatic protection for integrated circuits, in particular to an electrostatic protection device. Background technique [0002] In all links of integrated circuits, charge accumulation may occur. Under certain conditions, the charge will be transferred, and the instantaneous large current may exceed the critical value of the device and cause the chip to burn. Statistical data show that: Electro Static Discharge (ESD) is the main cause of failure of integrated circuits, especially in power integrated circuits. Therefore, electrostatic discharge has become the most important issue for designers. [0003] In order to reduce the economic loss caused by electrostatic discharge in integrated circuits, the most effective method is to design corresponding ESD protection devices with high performance ratio for each input and output port of integrated circuits. At present, ESD protection measures for conven...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L29/06
CPCH01L27/0262H01L29/0619
Inventor 陈卓俊曾云彭伟金湘亮吴志强
Owner HUNAN UNIV
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