Flexible panel and device with display panel
A flexible panel and flexible technology, applied in the direction of electrical components, electrical solid devices, circuits, etc., can solve the problems of reducing product life, increasing pressure drift in the channel area of thin film transistors, and electrical degradation of thin film transistors, so as to improve the service life , weaken the electrical degradation, increase the effect of bending times
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Embodiment 1
[0043] An embodiment of the present invention provides a flexible panel, such as figure 2 As shown, it includes a flexible backplane and several thin film transistors arranged in multiple arrays on the flexible backplane. Thin-Film-Transistor (TFT for short), thin-film transistor is one of the types of field-effect transistors, specifically, it can be an insulated gate field-effect transistor, and its production method is to deposit various thin films on the substrate, and its effect on display The performance of the device plays a very important role. Such as image 3 As shown, each thin film transistor includes a first electrode and a second electrode paired as a source and a drain, that is, the first electrode is a source S, and the second electrode is a drain D; or the first electrode is a drain D, The second electrode is the source S; a channel region is formed between the source S and the drain D, of course each thin film transistor also includes a gate G, the gate G ...
Embodiment 2
[0045] An embodiment of the present invention provides a flexible panel, such as figure 2 As shown, it includes a flexible backplane and several thin film transistors arranged in multiple arrays on the flexible backplane, each thin film transistor includes a first electrode and a second electrode, where the first electrode is the source S, The second electrode here is the drain D, a channel region is formed between the first electrode and the second electrode, and the flexible panel has a bending axis. At least one of the first electrode and the second electrode of the thin film transistor arranged along the bending axis overlaps the bending axis. Such as Figure 4 As shown, the bending axis only overlaps with the second electrode (drain) of the thin film transistor, and does not overlap with the first electrode (source). exist image 3 , the bending axes respectively overlap with the first electrode (source) and the second electrode (drain) of the thin film transistor. F...
Embodiment 3
[0053] The present invention provides a flexible panel, including a flexible backplane and several thin film transistors arranged in multiple arrays on the flexible backplane, such as figure 2 As shown, each thin film transistor includes a source S and a drain D, and a channel region is formed between the source S and the drain D. Of course, each thin film transistor also includes a gate G, and the gate G is not in the figure 2 displayed in detail. exist figure 2 The bending axis of the flexible panel is located in the center of the channel region of the thin film transistor, and the axial area of the bending axis of the flexible panel is a stress concentration area, which is more prone to stress defects when the flexible panel is bent. area, through figure 2 It can be seen that the stress concentration area in the non-uniform channel belongs to the partial area of the non-uniform channel, and the area not in the axial direction of the bending axis of the flexible pa...
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