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Switches with deep trench depletion and isolation structures

A deep trench isolation and deep trench technology, applied in semiconductor devices, electrical components, transistors, etc., can solve problems such as high-cost SOI wafers and degraded device performance

Active Publication Date: 2018-12-11
格芯美国公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, devices built on bulk Si substrates are known to suffer from degraded linearity, harmonics, noise, and leakage currents, any of which will degrade device performance, requiring higher cost SOI wafers

Method used

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  • Switches with deep trench depletion and isolation structures
  • Switches with deep trench depletion and isolation structures
  • Switches with deep trench depletion and isolation structures

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Embodiment Construction

[0012] The present disclosure relates to semiconductor structures, and more particularly, to switches having deep trench depletion and isolation structures and methods of fabricating the same. More specifically, the present disclosure relates to radio frequency (RF) switches with deep trench isolation structures for front-end module transceivers. Advantageously, deep trench isolation structures used with RF switches improve leakage current, noise and linearity (harmonics) of devices built on bulk Si substrates and high-resistivity bulk Si substrates. In addition, the structures described herein further reduce standby power.

[0013] In an embodiment, deep trench isolation structures surround FET switches and other CMOS devices to provide isolation for depletion regions. In fact, the deep trench isolation structures described herein can be used with any active device having a different substrate bias. For example, deep trench isolation structures can be used for double-well o...

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Abstract

The present disclosure relates to semiconductor structures and, more particularly, to switches with deep trench depletion and isolation structures and methods of manufacture. The structure includes abulk substrate with a fully depleted region below source and drain regions of at least one gate stack and confined by deep trench isolation structures lined with doped material.

Description

technical field [0001] The present disclosure relates to semiconductor structures, and more particularly, to switches having deep trench depletion and isolation structures and methods of fabricating the same. Background technique [0002] Radio Frequency (RF) devices are used in many different types of communication applications. For example, RF devices may be used in cellular telephones with wireless communication components such as switches, MOSFETs, transistors and diodes. [0003] As cellular phones become more complex and commoditized, there is an increasing need to provide higher performance and lower price points for wireless communication components. For example, a significant portion of the cost of manufacturing an RF switch is the cost of designing for very high linearity so that harmonic distortion is very low and meets product specifications. [0004] RF devices are typically fabricated on high-resistivity silicon wafers or substrates to achieve the required rf...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/10H01L21/762H01L21/764
CPCH01L21/76224H01L21/76232H01L21/764H01L29/1079H01L29/1083H01L29/78H01L27/088H01L29/0649H01L21/823481H01L21/761H01L21/823493H01L29/0603H01L21/763
Inventor S·M·尚克A·K·斯塔珀J·J·埃利斯-莫纳甘T·段
Owner 格芯美国公司