Crucible equipment and method for preparing aluminum nitride crystal
An aluminum nitride and crucible technology, which is applied in the field of crucible equipment for preparing aluminum nitride crystals, can solve the problem of difficulty in preparing the nucleation number and the like, and achieve the effects of reducing the nucleation number, continuous and stable growth, and stable aluminum vapor partial pressure
Active Publication Date: 2020-12-01
SHENZHEN UNIV
View PDF12 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] The main purpose of the present invention is to provide a crucible equipment and method for preparing aluminum nitride crystals, aiming to solve the technical problem that it is difficult to prepare large-sized aluminum nitride crystals with few nucleation numbers in the prior art
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0031] In order to make the purpose, features and advantages of the present invention more obvious and understandable, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described The embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative efforts belong to the protection scope of the present invention.
[0032] see figure 1 , figure 1 It is a cross-sectional schematic diagram of a crucible device for preparing aluminum nitride crystals in an embodiment of the present invention. In the embodiment of the present invention, the crucible device includes a crucible body 10 , a substrate 20 and a substrate temperature field adjustment component 30...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a crucible device and a method for preparing aluminum nitride crystals. The crucible device comprises a crucible body, a substrate and a substrate temperature field adjusting assembly, wherein the internal of the crucible body is divided into the first chamber, a second chamber and a third chamber which are mutually communicated from bottom to top, and the diameter of the second chamber is smaller than the diameters of the first chamber and the third chamber; and the substrate temperature field adjusting assembly is a hollow cylinder, the substrate covers the opening ofthe crucible body, and the bottom surface of the substrate temperature field adjusting assembly is laminated to the surface, away from the opening, of the substrate. Compared with devices in the prior art, the crucible device in the invention has the advantages of effective reduction of the number of nucleation of the aluminum nitride crystals, and obtaining of large-sized aluminum nitride crystals.
Description
technical field [0001] The invention relates to the field of crystal preparation, in particular to a crucible device and method for preparing aluminum nitride crystals. Background technique [0002] Deep ultraviolet light-emitting devices have broad application prospects in sterilization and disinfection, water purification, biomedicine, deep ultraviolet light sources, etc., and aluminum nitride crystals are ideal semiconductor materials for preparing deep ultraviolet light-emitting devices. At the same time, due to the high temperature and high pressure resistance, high piezoelectric effect and high electron mobility of aluminum nitride crystals, its application in the preparation of high-power electronic devices has also received high expectations and widespread attention. . However, the preparation of aluminum nitride crystal materials is very difficult. At present, the research on aluminum nitride crystals at home and abroad still stays at the centimeter-level preparati...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/00C30B29/40
CPCC30B23/00C30B29/403
Inventor 覃佐燕武红磊郑瑞生
Owner SHENZHEN UNIV