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A method for adding redundant graphics
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A technology of redundant graphics and graphics, applied in special data processing applications, instruments, electrical digital data processing, etc., can solve the problem that the contact area of the reaction side wall cannot be optimized, and achieve the effect of improving device reliability and ensuring uniformity
Active Publication Date: 2018-12-28
SHANGHAI HUALI MICROELECTRONICS CORP
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[0012]
The present invention is aimed at the prior art. The addition of traditional polysilicon redundant patterns is usually based on compensating the direct density of the pattern. The perimeter of the pattern, that is, the contact area of the reaction side wall, is often not optimal, so as to achieve the final uniform reaction contact surface. and other defects provide a redundant graph adding method
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no. 1 approach
[0068] When Per=Per T , then after adding the redundant graphics 121, the redundant graphics add the effective perimeter Per in the window 1 and the target effective perimeter Per T consistent, so there is no need to adjust the added redundant graphics 121.
no. 2 approach
[0070] When Per>Per T , the effective perimeter Per in window 1 after adding redundant graphics 121 exceeds the target effective perimeter Per T , so it is necessary to reduce and adjust the effective perimeter of the added redundant graphics 121 . That is, the added redundant graphics 121 are merged. Then after adding redundant graphics 121, the effective perimeter adjustment value of redundant graphics adding window 1 is:
[0071] ΔPer=Per-Per T
[0072] Assuming that the number of added redundant graphics 121 is N, the width of a single redundant graphic 121 is W, and the height is H, then the effective perimeter that needs to be reduced by a single redundant graphic 121 is:
[0073] ΔPer D =ΔPer / N
[0074] 1) Please refer to FIG. 4(a). FIG. 4(a) is a schematic diagram of merging and adjusting redundant graphics in the X direction.
[0075] Then, ΔPer D ≈2H(L-1)
[0076] Wherein, L is an integer greater than 0. In the present invention, since the combined effectiv...
no. 3 approach
[0082] When PerT , then the effective perimeter Per of the redundant graphic addition window 1 after adding the redundant graphic 121 is smaller than the target effective perimeter Per T , so it is necessary to increase and adjust the effective perimeter of the added redundant graphics 121 . That is, the added redundant graph 121 is split. Then after adding redundant graphics 121, the effective perimeter adjustment value of redundant graphics adding window 1 is:
[0083] ΔPer=Per T -Per
[0084] Assuming that the number of redundant graphics 121 added is N, the width of the redundant graphics 121 is W, and the height is H, then the effective perimeter that needs to be increased for a single redundant graphics 121 is:
[0085] ΔPer D =ΔPer / N
[0086] 1) Please refer to Figure 5(a). Figure 5(a) is a schematic diagram of splitting and adjusting redundant graphics in the X direction.
[0087] Then, ΔPer D ≈2H(L-1)
[0088] Wherein, L is an integer greater than 0. In the p...
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Abstract
The invention discloses a method for adding redundant graphics, which comprises the following steps: executing step S1: cutting the layout according to the preset window SW size; 2, calculating the pattern density and the effective perimeter of the original layout in each window; 3, selecting the preset redundant graphics to be added according to the target of the graphics density in the redundantgraphics addition window aft the redundant graphics are added; 4: merging or spliting the added redundant graphics to adjust the effective perimeter in the redundant graphics adding window after adding the redundant graphics. As the redundant patterns are merged or split, the effective perimeter of the pattern can be reduced or increased without changing the area or density of the pattern, Then the effective perimeter compensation of the pattern is realized, which provides a uniform wafer reaction contact surface for subsequent thin film deposition or thin film growth, thus ensuring the uniformity of the thickness of the deposited or grown thin film and improving the reliability of the device.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for adding redundant graphics. Background technique [0002] In order to achieve a uniform distribution of the layout of the integrated circuit and improve the process window of the related processes that depend on the distribution of the layout graphics in the manufacturing process, it is usually necessary to add redundant graphics in the area where the layout of the integrated circuit is sparsely distributed to make the distribution of the layout graphics relatively uniform, thereby reducing Manufacturing defects in the subsequent manufacturing process improve product yield. [0003] Thin film deposition or thin film growth, as an indispensable thin film formation technology in the semiconductor manufacturing process, is widely used in multiple process stages of semiconductor manufacturing. For example, siliconnitride film as a hard mask, silicon ...
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