Quantum dot and preparation method thereof

A technology of quantum dots and metal sources, applied in the field of quantum dots and their preparation, can solve problems such as difficulty in growth, and achieve the effects of improving light-emitting quality, improving light-emitting quality, and improving isotropy

Inactive Publication Date: 2019-01-04
嘉兴纳鼎光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Simply put, it is easier to grow in places with high sensitivity and easy t

Method used

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  • Quantum dot and preparation method thereof

Examples

Experimental program
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Effect test

Example Embodiment

[0018] A method for preparing quantum dots provided by an embodiment of the present invention includes: at least reacting one or more first metal sources, two or more second metal sources with different activities, a solvent, and a phosphorus source to form nanoparticles as cores, and then at least A shell layer is coated on the nanoparticles to form the quantum dots; the first metal source is an indium source, and the second metal source is a zinc source.

[0019] In some embodiments, the method for preparing quantum dots includes the following steps:

[0020] (1) Mix at least a first metal source, two or more second metal sources with different activities, a coordination type solvent and / or a non-coordination type solvent at a first temperature to form a first mixed liquid;

[0021] (2) Adjusting the temperature of the mixed solution to a second temperature, and adding a phosphorus source to react to form a second mixture, the mixture containing nanoparticles as cores;

[0022] (3) ...

Example Embodiment

[0069] Example 1

[0070] Multi-active Zn source

[0071] 1. In-Zn precursor: 0.11M In(AC) 3 , 0.44mmol Zn(st) 2 , 0.11mmol Zn(OA) 2 , 10ml ODE in a 100ml three-necked flask with N2 exchange for multiple times, the temperature is 100 ℃.

[0072] 2. Heat the In-Zn precursor to 180°C, add 0.3ml of tris(trimethylsilyl)phosphorus (hereinafter abbreviated as P(TMS)3), and react for 30 minutes.

[0073] 3. Add 2ml of Se-TOP at 250℃ and react for 20min.

[0074] 4. The temperature is raised to 300°C and 1 ml of n-dodecanethiol (DDT) is added and reacted for 60 minutes.

[0075] 5. Cool down to room temperature and purify.

Example Embodiment

[0076] Example 2

[0077] Multi-active Zn source

[0078] 1. In-Zn precursor: 0.11M In(AC) 3 , 0.44mmol Zn(st) 2 , 0.11mmol Zn(MA) 2 , 10ml ODE in a 100ml three-necked flask with N2 exchange for multiple times, the temperature is 100 ℃.

[0079] 2. Heat the In-Zn precursor to 200°C, add 0.5ml of tris(trimethylsilyl)phosphorus (hereinafter abbreviated as P(TMS)3), and react for 40min.

[0080] 3. Add 1.8ml of Se-TOP at 250℃ and react for 20min.

[0081] 4. The temperature is raised to 300°C and 0.9ml of n-dodecanethiol (DDT) is added and reacted for 50 minutes.

[0082] 5. Cool down to room temperature and purify.

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Abstract

The invention discloses a preparation method of a quantum dot. The preparation method comprises the following steps: at least using more than one first metal source, more than two second metal sourceswith different activities, a solvent and a phosphorus source to react to form a nano particle serving as a kernel, and then at least wrapping the nano particle with a shell to form the quantum dot, wherein the first metal source is an indium source, and the second metal sources are zinc sources. Compared with the prior art, the preparation method of the quantum dot, disclosed by the invention, has the advantage that the quantum dot is modified through two or more zinc source precursors with different activities to improve the luminous quality of the quantum dot. The quantum dot is modified byusing an inactive ligand precursor, so that the inactivity can be compensated, the shortcomings are improved or repaired, the isotropy of the nano particle of the quantum dot is enhanced, and the luminous quality of the quantum dot is improved.

Description

technical field [0001] The invention relates to the technical field of nanomaterial preparation, in particular to a quantum dot and a preparation method thereof. Background technique [0002] Quantum dots are semiconductor crystals composed of several atoms. Because of their quantum localization effect, they have good luminous properties. Compared with other luminescent materials, it can be applied in display, lighting, biology, solar cells, etc. Quantum dots are essentially a crystal, which has internal and external defects just like other crystals. The internal defects are mainly due to the lack of crystallinity during the synthesis process, the occurrence of stacking faults, twinning or site loss, etc. External defects are mainly surface atomic dangling bonds. [0003] All atoms in the crystal have a fixed coordination number, but the coordination number of atoms on the surface cannot meet the requirements, resulting in dangling bonds in the lack of coordination. The ...

Claims

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Application Information

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IPC IPC(8): C09K11/02C09K11/70C09K11/88B82Y20/00B82Y30/00B82Y40/00
CPCB82Y20/00B82Y30/00B82Y40/00C09K11/02C09K11/703C09K11/883
Inventor 刘珊
Owner 嘉兴纳鼎光电科技有限公司
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