81results about How to "Improve glow quality" patented technology

The invention relates to the field of display, in particular to an OLED (organic light emitting diode) pixel limit structure and a manufacturing method thereof. The invention aims to solve the problems that during the manufacturing of a pixel definition layer, as the pixel definition size is smaller, and liquid drops need to be precisely controlled to fall to the pixel limit area, the equipment investment is increased, the higher cost is caused, and the pixel limit area is difficult in forming a film with uniform thickness. The pixel definition layer in the embodiment of the invention includes sub pixel limit areas of different colors, and at least two sub pixel limit areas with the same color are communicated with each other; at least two sub pixel limit areas with the same color of the pixel definition layer are communicated with each other, so liquid drops fall to the communicated sub pixel limit areas to enable the communicated sub pixel limit areas to be filled with liquid due to the liquidity of the liquid; at least two sub pixel limit areas are communicated, so that the liquidity of the liquid is increased, and the film with uniform thickness can be formed in the sub pixel areas more easily; and accordingly, the lighting quality of a back panel is improved.

The present invention discloses a multi-element perovskite material, and a single crystal, powder and a film thereof, as well as the applications thereof in photoluminescence and electroluminescence, in which the multi-element perovskite material is a multi-element fully-inorganic salt of non-lead metal halide and has a perovskite structure; and the chemical formula of the multi-element perovskite material is Cs2NaxAg1-xInyBi1-yCl6, wherein 0≤x≤1, 0≤y≤1. Meanwhile, based on the very strong self-trapped excitors states of the double perovskite, the present invention proposes a high-efficiency single-phase broadband phosphor and an electroluminescent device.

The invention provides a silica gel lens, a fabrication method of the silica gel lens and an LED (light-emitting diode) light emitting device comprising the silica gel lens. The silica gel lens comprises a quantum dot macromolecule dispersion, fluorescent powder and silica gel with a mass ratio of 1:(3-7):(40-50), wherein mass content percentage of quantum dot materials in the quantum dot macromolecule dispersion is 0.01-10%. As the quantum dot materials have the characteristics of a wide excitation spectrum and continuous distribution of the spectrum, and light emitting wavelengths of quantum dots can be controlled by adjusting the particle diameter, the quantum dot materials with the different particle diameters can be selected according to design requirements; and as the spectrum half peak widths of the quantum dot materials are smaller, and the quantum dot materials have no self-absorption characteristics or low self-absorption characteristics, the light emitting efficiency and light emitting quality can be better improved, and a light emitting effect of the silica gel lens can be effectively improved.

The invention relates to an LED light fitting and a light engine thereof; the LED light fitting comprises an optical part, an electrical part and a heat dissipation part, wherein the optical part comprises an LED light source and a light-emitting channel; the electrical part comprises a protecting cover and a circuit board; the heat dissipation part comprises a radiator and at least one heat pipe which are arranged between the protecting cover and the optical part; the radiator comprises a ring-shaped radiating base, a plurality of fins which are distributed on the outer surface of the radiating base in a radial way, and a heat absorbing plate positioned on the radiating base close to one end of the optical part; the radiating base is internally provided with a cavity body provided with an opening towards one end of the protecting cover; the LED light source is in thermal contact with the outer surface of the heat absorbing plate facing the optical part; and the heat pipe is arranged inside the cavity body of the radiating base and comprises an evaporation section and a condensation section, wherein the evaporation section is in thermal contact with the inner surface of the heat absorbing plate facing the electrical part, and the condensation section is in thermal contact with the inner surface of the radiating base.

The invention relates to a backlight module, including circuit board, LED array and driving circuit. The LED array is set on the circuit board and has 3N lines of light source groups, where the first line of light source group and 3Nth line of light source group are adjacent to two sides of the circuit board, respectively, and each line has several LEDs. The driving circuit provides current for the LED array, to make the brightness of each LED of the 3Nth line is less than that of the third line, and the brightness of each LED of the first line is less than that of the 3N-2th line.

The invention discloses a method for preparing fluorescent powder colloid. The method comprises the following processing steps: 1) preheating an epoxy resin A agent for 1 to 1.5 hours at the temperature of between 55 and 65 DEG C; 2) putting fluorescent powder, the preheated epoxy resin A agent and a curing agent B into a mixer in a mass ratio of 6-15: 100: 100, and evenly mixing the materials for 10 to 15 minutes at the stirring rate of 30 to 40rpm; and 3) vacuumizing the mixture for 5 to 10 minutes at the temperature of between 75 and 85 DEG C to remove bubbles in the mixture so as to obtain a finished product. The fluorescent powder, the epoxy resin A agent and the curing agent B are evenly mixed to prepare the fluorescent powder colloid so that the fluorescent powder is evenly dispersed in the fluorescent powder colloid; the fluorescent powder colloid applied to a product can remarkably improve the luminous quality, has even rays, good consistency and high excitation efficiency, enables a whole light-emitting diode to emit light in 360 degrees, and has no ray loss.

The invention discloses an induction type wireless energy transmission light emitting diode (LED) drive circuit, which comprises a power factor correction circuit, an inverter circuit, a loosely coupled transformer, a rectifier circuit and an LED light source; wherein the output end of the power factor correction circuit is connected with the input end of the inverter circuit, the output end of the inverter circuit is connected with the primary side of the loosely coupled transformer, the secondary side of the loosely coupled transformer is connected with the alternating current input end of the rectifier circuit, the direct current output end of the rectifier circuit is connected with the power supply terminal of the LED light source. Compared with the prior art, the drive circuit disclosed by the invention has the advantages that wireless energy transmission LED drive circuit is realized by using a loosely coupled transformer; the interaction of the heat dissipation of the drive circuit and the heat dissipation of the LED light source is avoided; the voltage of the switching device and the current stress are decreased by a resonant circuit; the luminous efficiency, the quality of light, and the service life of the LED light source are improved by the drive circuit; the high efficiency and high reliability of the LED driver is guaranteed.

The invention discloses an organic light emitting display device, a preparing method thereof and a display apparatus. The organic light emitting display device comprises the components of a substrate; a first electrode which is arranged on the substrate; a light emitting layer arranged on one side, which is far from the substrate, of the first electrode; a second electrode arranged on one side, which is far from the first electrode, of the light emitting layer; and a polarization reflecting layer arranged on one side, which is far from the light emitting layer, of the first electrode, or one side, which is far from the light emitting layer, of the second electrode. Therefore, the organic light emitting display device, the preparing method thereof and the display apparatus have advantages of improving electrode reflectivity of the organic light emitting display device, improving brightness and stability of the device, improving polarization characteristic of light which is output from the device, and improving light emitting quality of the device.

The invention discloses silicon-based group III-V nanotubes and micro-tubes as well as a preparation method thereof. The nanotubes and the micro-tubes are of cylindrical hollow tubular structures with non-closed ends, which are formed by self-crimping of epitaxially grown group III-V strain semiconductor films on a single crystal Si substrate, the diameters of the nanotubes and the micro-tubes are 1 nm to 100 microns, and the lengths of the nanotubes and the micro-tubes are 1 micron to 1 mm. The tubular structures have great application value in the fields of silicon-based photonics, micro-machine systems and sensing. The invention integrates mutated epitaxial growth from bottom to top with a photoetching corrosion technology from top to bottom. Through lateral corrosion of group III-V sacrificial layers, the group III-V strain dual-layer films are released from Si and are crimped to tubes. The method is compatible with a process of group III-V photoelectron and micro-electronics devices and has the advantages of simple tube production process, good tube appearance, controllable tube size and the like, and furthermore, a large area of group III-V nanotube or micro-tube arrays with consistent rule are easily formed on the Si.

A backlight device (3) is provided with a substrate (9) whereupon a plurality of light emitting diodes (10) are arranged, and a lower side chassis (heat dissipating section) (6) where heat generated in the light emitting diodes (10) is transferred from the substrate (9) and dissipated to the external. A heating value of each light emitting diode (10) is previously measured, and based on the measurement results of the heating values, an arrangement position on the substrate (9) is determined and corresponding light emitting diodes (10) are arranged.

The invention relates to a manufacturing method of a flourescent material, comprising the steps of supplying a spindle-shaped object which comprises a magnesium source, a silicon source, an aluminum source, an oxygen source, a solid state nitrogen source, an ammonium halide salt and an activator ion source; wrapping an ignition agent on the spindle-shaped object to obtain a reactive spindle; placing the reactive spindle in an adiabatic apparatus and filling ceramic powder between the adiabatic apparatus and the reactive spindle; and igniting the spindle-shaped object by burning the ignition agent to obtain a flourescent material taking Mg-alpha-SiAlO<n> as a host lattice. Therefore, the purposes are achieved that the manufacturing process is simple, time is not consumed and the flourescent material can be manufactured without needing high temperature and high pressure conditions.

The invention provides a preparation method of a remote fluorescent film for a high-power light-emitting diode (LED). The preparation method comprises the following steps: first, preparing low-melting-point glass powder by a melting method, dispersing the glass powder and fluorescent powder in an organic solvent, and uniformly mixing them into a fluorescent glass slurry; and coating the fluorescent glass slurry on a frosted glass substrate by a spin coating / screen printing technology to form a uniform fluorescent film layer, drying the uniform fluorescent film layer in a vacuum oven, then sintering the uniform fluorescent film layer at low temperature, and cooling the uniform fluorescent film layer along with a furnace to obtain the fluorescent film. The fluorescent film prepared by the method is simple in preparation process and good in chemical and optical properties; in addition, a glass substrate with a frosted surface can reduce specular reflection and minimize total internal reflection so as to increase the efficiency of white light output; therefore, compared with a flat glass plate, the fluorescent film with a frosted glass substrate is increased in efficiency under the excitation of an LED blue light chip, and the preparation method is easy to control and realize white light output, so that the fluorescent film can be applied to the field of semiconductor lighting.

The invention discloses an orange light thermally activated delayed fluorescence material as well as a synthesis method and application thereof, and belongs to the technical field of organic photoelectric materials and devices. The orange light thermally activated delayed fluorescence material is DV-Cz-DCPP and is a thermal crosslinking type TADF molecule, use of a metal catalyst can be avoided inthe polymerization process, further purification treatment is not needed, and the polymer synthesis and purification process is simplified. In the application, a redissolution process of the polymercan be avoided through an in-situ polymerization method, a polymer synthesis process and a light-emitting layer film manufacturing process are combined into one, and the device manufacturing process is simplified; and the proportion of the host-guest content can be accurately controlled, so that the stability and the light-emitting quality of the white light device can be improved. The polymer film subjected to in-situ crosslinking by applying the DV-Cz-DCPP has the characteristics of good film-forming property, good stability, strong solvent corrosion resistance and the like, is convenient for further spin coating of an electron transport material, provides guarantee for a full-wet device, improves the utilization rate of the material, reduces the cost and improves the productivity.

The invention relates to a high-brightness light-emitting diode (LED) panel lamp, in particular to a frameless high-brightness LED panel lamp. The panel lamp comprises a light guide plate, wherein a trough is formed on the light guide plate; an LED lamp strip is arranged in the trough; and a reflective sheet is arranged at the lower end of the light guide plate. Through the design that the LED lamp strip is arranged in the trough, an external frame is not needed, and the LED lamp strip is directly arranged in the light guide plate, so that frameless display of the panel lamp is realized, and the light-emitting area of the panel lamp is maximized; and meanwhile, the size and the thickness of the panel lamp are effectively reduced, the manufacturing cost is saved, and the production efficiency is improved.

The invention relates to a method for preparing white light emitting diode by employing blue light or purple light emitting diode chips which comprises, fixing the blue light or purple light emitting diode chips onto the bottom of the reaction container, charging in yttrium acetate prepared by a finite proportion, and water solution of europium acetate, dropping in iso-alumium butoxide water solution while keeping at 80-85 deg. C, pH4-6 of solution and presence of mixing, continuing mixing till formation of gel on the surface of the diode, sintering 40 minutes at 850-1100 deg. C, taking out for cutting and packaging.

The invention relates to a light emitting device (1) comprising a substrate (5), a transparent anode layer (7), a cathode layer (9), a light emitting layer (8) between the anode and cathode layers, and an intermediate layer (4) between the substrate and the anode layer. An electrically conducting element is embedded in the intermediate layer such that it is in contact with the anode layer. Also, scattering particles for scattering the light are embedded in the intermediate layer, increasing the light outcoupling efficiency of the device. Since the electrically conducting element is embedded in the intermediate layer and not, for instance, on top of the anode layer, i.e. not in between the anode and cathode layers, the sheet resistance of the anode layer can be reduced, without requiring a passivation layer which may adversely affect the light emitting material. Furthermore, the embedded electrically conducting element allows the thickness of the transparent anode layer to be reduced to a thickness of about 50 nm or less, thereby minimizing the influence of light absorption by the transparent anode layer on the light outcoupling efficiency. This allows for an improved light emission quality.

The invention provides a quantum dot color film substrate and a liquid crystal display device. The liquid crystal display device comprises a quantum dot color film substrate, comprising a substrate, acolor filter layer, a band-pass filter film and a packaging layer; an array substrate disposed opposite to the quantum dot color film substrate; a liquid crystal layer disposed between the quantum dot color film substrate and the array substrate; and a backlight module, disposed below the array substrate.

The invention discloses a curve-surface liquid crystal backlight module. The curve-surface liquid crystal backlight module comprises a back frame, two light sources, a light guide plate, a diffusion film, an optical membrane and a brightening film, wherein the back frame is arranged at the bottom end of the backlight module, the brightening film, the diffusion film, the optical membrane and the light guide plate are sequentially arranged on the backlight module from top to bottom, the two light sources are tightly connected to two sides of the light guide plate, a plurality of backlight lamp frames are arranged on the light guide plate, each backlight lamp frame is of a funnel shape, the bottom of the funnel shape is an oblique face, the front end of the funnel shape is a parallel face, and the whole backlight module forms a curve surface. Due to the two light sources on two sides of the light guide plate, black strips during light emitting can be avoided, the light emitting quality of the backlight module is enhanced. Due to the fact that optical membrane can allow the light reflected by the light guide plate to be even, the front-side observation of staff is facilitated.

The invention discloses a fixing element of a backlight module. The fixing element is used for fixing a reflector plate to a backboard, and the reflector plate and the backboard are provided with a reflector plate through hole and a backboard through hole respectively. The fixing element of the backlight module comprises a first clamping part, a second clamping part, a rod and a crash pad. The first clamping part is provided with a first clamping face, and the second clamping part is provided with a second clamping face. The rod is provided with a peripheral side face, and the rod is connectedwith the first clamping part and the second clamping part. When the rod is located in the backboard through hole and the reflector plate through hole, the first clamping part and the second clampingpart are exposed out of the backboard and the reflector plate, and the first clamping part and the second clamping part clamp the reflector plate and the backboard. The crash pad is arranged on the first clamping face, the second clamping face and the peripheral side face. The invention further discloses the backlight module including the fixing element.

The invention relates to a light-emitting diode based on a hole adjustment layer. The light-emitting diode comprises a substrate layer, a buffer layer located on the substrate layer, a low-temperaturegallium nitride layer located on the buffer layer, an unintentionally doped gallium nitride layer located on the low-temperature gallium nitride layer, a superlattice layer located on the unintentionally doped gallium nitride layer, an N-type semiconductor layer located on the superlattice layer, an N-type doped layer located on the N-type semiconductor layer, a quantum well light-emitting layerlocated on the N-type doped layer, an electron blocking layer located on the quantum well light-emitting layer, a hole adjusting layer comprising a first non-doped layer, a second non-doped layer anda P-type doped layer which are sequentially laminated on the electron blocking layer, and a P-type semiconductor layer located on the hole adjusting layer. According to the light-emitting diode, the light emitting quality of the light-emitting diode can be improved. The hole concentration of holes migrated to the quantum well light-emitting layer can be improved, so that the light-emitting efficiency of the light-emitting diode is improved.

The invention discloses a fixing element of a backlight module. The fixing element is used for fixing a reflector plate to a backboard, and the reflector plate and the backboard are provided with a reflector plate through hole and a backboard through hole respectively. The fixing element of the backlight module comprises a first fixing part, a second fixing part and a rod. The second fixing part is provided with a screw hole. The rod is connected with the first fixing part and the second fixing part. When the rod is located in the backboard through hole and the reflector plate through hole, the first fixing part and the second fixing part are exposed out of the backboard and the reflector plate, the rod is provided with a threaded structure, and the threaded structure is in screw joint with the screw hole so that the reflector plate and the backboard can be fixed by the first fixing part and the second fixing part. The invention further discloses the backlight module including the fixing element.

The embodiment of the invention provides a display device. The display device comprises a substrate, a planarized layer covering the substrate and a protective layer covering one side, deviating fromthe substrate, of the planarized layer; and the protective layer has thermal conductivity, transparency and insulativity. According to the embodiment of the invention, the protective layer with the thermal conductivity, transparency and insulativity covers the planarized layer, the planarized layer can be effectively protected, the planarized layer is prevented from deforming in a follow-up preparation process, loss of blue light in white light of the planarized layer is reduced, color temperature is increased, the white light is improved, and light emitting quality of the display device is improved.

The invention relates to an organic electroluminescence device, especially an organic electroluminescence device able to prolong service life of pixels in luminous region, mainly provided with a pseudo region between isolation wall / pixel defining layer and sealing gum layer of a cover plate so as to be able to assure the isolation wall or pixel defining layer in the sealing gum layer to prevent water and damp from entering in the cover plate, thus able to effectively prohibit the reduction of luminous area in the luminous region to prolong the service life and luminous quality of pixels in the luminous region.

The invention provides an LED (Light-Emitting Diode) light source module, which comprises a substrate, an LED packaging body, a lens and fluorescent powder, wherein the LED packaging body is fixedly arranged on the substrate and is electrically connected with the outside through the substrate. An inner concave accommodation space is formed in the lens and is fixedly arranged on the substrate for sealing the LED packaging body in the accommodation space. The fluorescent powder is coated on the surface of the lens. The light emitted by the LED packaging body is converted into light with a specific wavelength by the fluorescent powder coated on the lens in the process of penetrating through the lens; and the light is radiated outwards.

The invention relates to a luminescent element and a group of fluorescence lamps. The group of fluorescence lamps wherein comprises a first fluorescence lamp and a second fluorescence lamp. The first fluorescence lamp is provided with a first conductor and a second conductor, which are respectively arranged on the two ends of the first fluorescence lamp; the second fluorescence lamp is provided with a third conductor and a fourth conductor, which are respectively arranged on the two ends of the second fluorescence lamp. The second conductor of the first fluorescence lamp is electrically connected with the third conductor of the second fluorescence lamp. The second fluorescence lamp is approximately arranged along a long axial direction of the first fluorescence lamp. The invention also discloses a luminescent element which is provided with a group of fluorescence lamps. The luminescent element comprises a back board and a group of fluorescence lamps. The invention can solve the problem that granules of fluorescence powders are unevenly distributed when only one fluorescence lamp is used, improves evenness of fluorescence powders on the internal walls of the fluorescence lamps, decreases color difference of the integer light source of the luminescent element and improves light quality of the luminescent element.

The invention discloses an infrared light-emitting diode. The infrared light-emitting diode comprises a light-emitting chip, a first supporting chip, a second supporting pin, a cup body, a packaging body and a gold wire, one end of the cup body is of a plane structure, the light-emitting chip is fixed to the plane structure and covered with an electromagnetic shielding cover, and the bottom of the electromagnetic shielding cover is connected with the plane structure through conducting resin; the packaging body is a sealed cavity formed by bonding a silicious body and a glass body, the glass body protrudes to the sealed cavity to form a spherical surface micro-cavity structure, and the light-emitting chip and the spherical surface micro-cavity structure are corrected and aligned. The infrared light-emitting diode is uniform in emitted light and excellent in condensation performance.

The invention relates to a light-emitting diode flip chip grain. The light-emitting diode flip chip grain comprises a flip chip grain and a heat dissipating and light absorbing layer combined to the side face of the flip chip grain, the heat dissipating and light absorbing layer is capable of absorbing light outgoing from the side face of the flip chip grain and dissipating heat generated by the flip chip grain, in this way, heat dissipation of the flip chip grain can be improved, light wavelength shift, caused by poor heat dissipation, of the flip chip grain is avoided, and the light emittingquality of the light-emitting diode flip chip grain is improved. The invention further provides a displayer using the light-emitting diode flip chip grain.

The invention discloses a linear LED light source, a linear LED lamp and a manufacturing method for the linear LED light source. The linear LED light source comprises a metal substrate, multiple LED wafers, at least one coffer and at least one packaging part used for covering and packaging the LED wafers. The LED wafers installed on the metal substrate are connected in series. The coffer is fixed to the metal substrate. The coffer surrounds the peripheries of the LED wafers. The linear LED light source and the linear LED lamp are good in light emitting quality and low in production cost.