79results about How to "Improve glow quality" patented technology

The invention relates to the field of display, in particular to an OLED (organic light emitting diode) pixel limit structure and a manufacturing method thereof. The invention aims to solve the problems that during the manufacturing of a pixel definition layer, as the pixel definition size is smaller, and liquid drops need to be precisely controlled to fall to the pixel limit area, the equipment investment is increased, the higher cost is caused, and the pixel limit area is difficult in forming a film with uniform thickness. The pixel definition layer in the embodiment of the invention includes sub pixel limit areas of different colors, and at least two sub pixel limit areas with the same color are communicated with each other; at least two sub pixel limit areas with the same color of the pixel definition layer are communicated with each other, so liquid drops fall to the communicated sub pixel limit areas to enable the communicated sub pixel limit areas to be filled with liquid due to the liquidity of the liquid; at least two sub pixel limit areas are communicated, so that the liquidity of the liquid is increased, and the film with uniform thickness can be formed in the sub pixel areas more easily; and accordingly, the lighting quality of a back panel is improved.

The invention discloses a method for preparing fluorescent powder colloid. The method comprises the following processing steps: 1) preheating an epoxy resin A agent for 1 to 1.5 hours at the temperature of between 55 and 65 DEG C; 2) putting fluorescent powder, the preheated epoxy resin A agent and a curing agent B into a mixer in a mass ratio of 6-15: 100: 100, and evenly mixing the materials for 10 to 15 minutes at the stirring rate of 30 to 40rpm; and 3) vacuumizing the mixture for 5 to 10 minutes at the temperature of between 75 and 85 DEG C to remove bubbles in the mixture so as to obtain a finished product. The fluorescent powder, the epoxy resin A agent and the curing agent B are evenly mixed to prepare the fluorescent powder colloid so that the fluorescent powder is evenly dispersed in the fluorescent powder colloid; the fluorescent powder colloid applied to a product can remarkably improve the luminous quality, has even rays, good consistency and high excitation efficiency, enables a whole light-emitting diode to emit light in 360 degrees, and has no ray loss.

The invention discloses an organic light emitting display device, a preparing method thereof and a display apparatus. The organic light emitting display device comprises the components of a substrate; a first electrode which is arranged on the substrate; a light emitting layer arranged on one side, which is far from the substrate, of the first electrode; a second electrode arranged on one side, which is far from the first electrode, of the light emitting layer; and a polarization reflecting layer arranged on one side, which is far from the light emitting layer, of the first electrode, or one side, which is far from the light emitting layer, of the second electrode. Therefore, the organic light emitting display device, the preparing method thereof and the display apparatus have advantages of improving electrode reflectivity of the organic light emitting display device, improving brightness and stability of the device, improving polarization characteristic of light which is output from the device, and improving light emitting quality of the device.

The invention discloses silicon-based group III-V nanotubes and micro-tubes as well as a preparation method thereof. The nanotubes and the micro-tubes are of cylindrical hollow tubular structures with non-closed ends, which are formed by self-crimping of epitaxially grown group III-V strain semiconductor films on a single crystal Si substrate, the diameters of the nanotubes and the micro-tubes are 1 nm to 100 microns, and the lengths of the nanotubes and the micro-tubes are 1 micron to 1 mm. The tubular structures have great application value in the fields of silicon-based photonics, micro-machine systems and sensing. The invention integrates mutated epitaxial growth from bottom to top with a photoetching corrosion technology from top to bottom. Through lateral corrosion of group III-V sacrificial layers, the group III-V strain dual-layer films are released from Si and are crimped to tubes. The method is compatible with a process of group III-V photoelectron and micro-electronics devices and has the advantages of simple tube production process, good tube appearance, controllable tube size and the like, and furthermore, a large area of group III-V nanotube or micro-tube arrays with consistent rule are easily formed on the Si.

The invention provides a preparation method of a remote fluorescent film for a high-power light-emitting diode (LED). The preparation method comprises the following steps: first, preparing low-melting-point glass powder by a melting method, dispersing the glass powder and fluorescent powder in an organic solvent, and uniformly mixing them into a fluorescent glass slurry; and coating the fluorescent glass slurry on a frosted glass substrate by a spin coating/screen printing technology to form a uniform fluorescent film layer, drying the uniform fluorescent film layer in a vacuum oven, then sintering the uniform fluorescent film layer at low temperature, and cooling the uniform fluorescent film layer along with a furnace to obtain the fluorescent film. The fluorescent film prepared by the method is simple in preparation process and good in chemical and optical properties; in addition, a glass substrate with a frosted surface can reduce specular reflection and minimize total internal reflection so as to increase the efficiency of white light output; therefore, compared with a flat glass plate, the fluorescent film with a frosted glass substrate is increased in efficiency under the excitation of an LED blue light chip, and the preparation method is easy to control and realize white light output, so that the fluorescent film can be applied to the field of semiconductor lighting.

The invention discloses an orange light thermally activated delayed fluorescence material as well as a synthesis method and application thereof, and belongs to the technical field of organic photoelectric materials and devices. The orange light thermally activated delayed fluorescence material is DV-Cz-DCPP and is a thermal crosslinking type TADF molecule, use of a metal catalyst can be avoided inthe polymerization process, further purification treatment is not needed, and the polymer synthesis and purification process is simplified. In the application, a redissolution process of the polymercan be avoided through an in-situ polymerization method, a polymer synthesis process and a light-emitting layer film manufacturing process are combined into one, and the device manufacturing process is simplified; and the proportion of the host-guest content can be accurately controlled, so that the stability and the light-emitting quality of the white light device can be improved. The polymer film subjected to in-situ crosslinking by applying the DV-Cz-DCPP has the characteristics of good film-forming property, good stability, strong solvent corrosion resistance and the like, is convenient for further spin coating of an electron transport material, provides guarantee for a full-wet device, improves the utilization rate of the material, reduces the cost and improves the productivity.

The invention relates to a method for preparing white light emitting diode by employing blue light or purple light emitting diode chips which comprises, fixing the blue light or purple light emitting diode chips onto the bottom of the reaction container, charging in yttrium acetate prepared by a finite proportion, and water solution of europium acetate, dropping in iso-alumium butoxide water solution while keeping at 80-85 deg. C, pH4-6 of solution and presence of mixing, continuing mixing till formation of gel on the surface of the diode, sintering 40 minutes at 850-1100 deg. C, taking out for cutting and packaging.

The invention discloses a preparation method of a quantum dot. The preparation method comprises the following steps: at least using more than one first metal source, more than two second metal sourceswith different activities, a solvent and a phosphorus source to react to form a nano particle serving as a kernel, and then at least wrapping the nano particle with a shell to form the quantum dot, wherein the first metal source is an indium source, and the second metal sources are zinc sources. Compared with the prior art, the preparation method of the quantum dot, disclosed by the invention, has the advantage that the quantum dot is modified through two or more zinc source precursors with different activities to improve the luminous quality of the quantum dot. The quantum dot is modified byusing an inactive ligand precursor, so that the inactivity can be compensated, the shortcomings are improved or repaired, the isotropy of the nano particle of the quantum dot is enhanced, and the luminous quality of the quantum dot is improved.

The invention relates to a light emitting device (1) comprising a substrate (5), a transparent anode layer (7), a cathode layer (9), a light emitting layer (8) between the anode and cathode layers, and an intermediate layer (4) between the substrate and the anode layer. An electrically conducting element is embedded in the intermediate layer such that it is in contact with the anode layer. Also, scattering particles for scattering the light are embedded in the intermediate layer, increasing the light outcoupling efficiency of the device. Since the electrically conducting element is embedded in the intermediate layer and not, for instance, on top of the anode layer, i.e. not in between the anode and cathode layers, the sheet resistance of the anode layer can be reduced, without requiring a passivation layer which may adversely affect the light emitting material. Furthermore, the embedded electrically conducting element allows the thickness of the transparent anode layer to be reduced to a thickness of about 50 nm or less, thereby minimizing the influence of light absorption by the transparent anode layer on the light outcoupling efficiency. This allows for an improved light emission quality.

The invention provides a quantum dot color film substrate and a liquid crystal display device. The liquid crystal display device comprises a quantum dot color film substrate, comprising a substrate, acolor filter layer, a band-pass filter film and a packaging layer; an array substrate disposed opposite to the quantum dot color film substrate; a liquid crystal layer disposed between the quantum dot color film substrate and the array substrate; and a backlight module, disposed below the array substrate.

The invention discloses a curve-surface liquid crystal backlight module. The curve-surface liquid crystal backlight module comprises a back frame, two light sources, a light guide plate, a diffusion film, an optical membrane and a brightening film, wherein the back frame is arranged at the bottom end of the backlight module, the brightening film, the diffusion film, the optical membrane and the light guide plate are sequentially arranged on the backlight module from top to bottom, the two light sources are tightly connected to two sides of the light guide plate, a plurality of backlight lamp frames are arranged on the light guide plate, each backlight lamp frame is of a funnel shape, the bottom of the funnel shape is an oblique face, the front end of the funnel shape is a parallel face, and the whole backlight module forms a curve surface. Due to the two light sources on two sides of the light guide plate, black strips during light emitting can be avoided, the light emitting quality of the backlight module is enhanced. Due to the fact that optical membrane can allow the light reflected by the light guide plate to be even, the front-side observation of staff is facilitated.

The invention discloses a fixing structure of a backlight module. The fixing structure comprises a reflective sheet and a back plate. Two positioning pieces are arranged on the two sides of the reflective sheet respectively; the back plate is connected with the reflective sheet, two clamping parts are arranged on the two sides of the back plate, and the positioning pieces are correspondingly clamped to the clamping parts so that the reflective sheet and the back plate can be fixed to each other. The invention further discloses a manufacturing method of the fixing structure of the backlight module.

The invention relates to a light-emitting diode based on a hole adjustment layer. The light-emitting diode comprises a substrate layer, a buffer layer located on the substrate layer, a low-temperaturegallium nitride layer located on the buffer layer, an unintentionally doped gallium nitride layer located on the low-temperature gallium nitride layer, a superlattice layer located on the unintentionally doped gallium nitride layer, an N-type semiconductor layer located on the superlattice layer, an N-type doped layer located on the N-type semiconductor layer, a quantum well light-emitting layerlocated on the N-type doped layer, an electron blocking layer located on the quantum well light-emitting layer, a hole adjusting layer comprising a first non-doped layer, a second non-doped layer anda P-type doped layer which are sequentially laminated on the electron blocking layer, and a P-type semiconductor layer located on the hole adjusting layer. According to the light-emitting diode, the light emitting quality of the light-emitting diode can be improved. The hole concentration of holes migrated to the quantum well light-emitting layer can be improved, so that the light-emitting efficiency of the light-emitting diode is improved.

The embodiment of the invention provides a display device. The display device comprises a substrate, a planarized layer covering the substrate and a protective layer covering one side, deviating fromthe substrate, of the planarized layer; and the protective layer has thermal conductivity, transparency and insulativity. According to the embodiment of the invention, the protective layer with the thermal conductivity, transparency and insulativity covers the planarized layer, the planarized layer can be effectively protected, the planarized layer is prevented from deforming in a follow-up preparation process, loss of blue light in white light of the planarized layer is reduced, color temperature is increased, the white light is improved, and light emitting quality of the display device is improved.

The invention relates to an organic electroluminescence device, especially an organic electroluminescence device able to prolong service life of pixels in luminous region, mainly provided with a pseudo region between isolation wall/pixel defining layer and sealing gum layer of a cover plate so as to be able to assure the isolation wall or pixel defining layer in the sealing gum layer to prevent water and damp from entering in the cover plate, thus able to effectively prohibit the reduction of luminous area in the luminous region to prolong the service life and luminous quality of pixels in the luminous region.

The invention provides an LED (Light-Emitting Diode) light source module, which comprises a substrate, an LED packaging body, a lens and fluorescent powder, wherein the LED packaging body is fixedly arranged on the substrate and is electrically connected with the outside through the substrate. An inner concave accommodation space is formed in the lens and is fixedly arranged on the substrate for sealing the LED packaging body in the accommodation space. The fluorescent powder is coated on the surface of the lens. The light emitted by the LED packaging body is converted into light with a specific wavelength by the fluorescent powder coated on the lens in the process of penetrating through the lens; and the light is radiated outwards.

The invention relates to a luminescent element and a group of fluorescence lamps. The group of fluorescence lamps wherein comprises a first fluorescence lamp and a second fluorescence lamp. The first fluorescence lamp is provided with a first conductor and a second conductor, which are respectively arranged on the two ends of the first fluorescence lamp; the second fluorescence lamp is provided with a third conductor and a fourth conductor, which are respectively arranged on the two ends of the second fluorescence lamp. The second conductor of the first fluorescence lamp is electrically connected with the third conductor of the second fluorescence lamp. The second fluorescence lamp is approximately arranged along a long axial direction of the first fluorescence lamp. The invention also discloses a luminescent element which is provided with a group of fluorescence lamps. The luminescent element comprises a back board and a group of fluorescence lamps. The invention can solve the problem that granules of fluorescence powders are unevenly distributed when only one fluorescence lamp is used, improves evenness of fluorescence powders on the internal walls of the fluorescence lamps, decreases color difference of the integer light source of the luminescent element and improves light quality of the luminescent element.

The invention discloses an LED driving circuit and an LED electrical indicating lamp. A power supply module and a circuit current sharing module are included. The circuit current sharing module comprises N parallel LED branches with a same specification. Each LED branch comprises an LED string, a triode, a base electrode resistor and an emitter electrode resistor. The N is an integer which is not less than 2. A first end of the LED string is connected to an output positive end of the power supply module. A second end of the LED string is connected to a first end of the base electrode resistor and a collector electrode of the triode on the branch where the LED string is located respectively. A second end of the base electrode resistor and a base electrode of the triode are connected. An emitter electrode of the triode and a first end of the emitter electrode resistor are connected. A second end of the emitter electrode resistor and an output negative end of the power supply module are connected. First ends of the base electrode resistors on the N LED branches are mutually connected. In the invention, a service life of the LED electrical indicating lamp is prolonged, a failure rate of the LED electrical indicating lamp is reduced, and reliability of the LED electrical indicating lamp is increased.