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64results about How to "Good polarization properties" patented technology

Monolithic integrated InGaAs near-infrared detector for sub-wavelength micro-polarization grating

The invention discloses a monolithic integrated InGaAs line array or stacked array detector for a sub-wavelength micro-polarization grating. The detector is a photoelectric detector and consists of an InGaAs photosensitive chip, an anti-reflection film and the sub-wavelength micro-polarization grating, wherein the anti-reflection film is made of a low-refractive index SiO2 material, and the extinction ratio of the sub-wavelength micro-polarization grating is improved; the sub-wavelength micro-polarization grating is a polarization grating line array or array consisting of polarization units in different polarization orientations; and each polarization unit is a metal polarization grating of which the grating period is shorter than that of an incident light wavelength. The sub-wavelength micro-polarization grating is integrated on a chip of a near-infrared detector, and the invention has the main advantages that: (1) the polarization grating is monolithically integrated with the detector, an optical system is simplified, and motion parts of a polarization scanning system are eliminated; (2) high-accuracy angle quantification can be achieved, and an angle error is avoided; and (3) the polarization units in the different polarization orientations are imaged simultaneously, and accurate polarization information is acquired from a moving target.
Owner:SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI

Ytterbium doped photonic crystal fiber nonlinear polarization rotation mode-locked laser device

The invention relates to an ytterbium doped photonic crystal fiber nonlinear polarization rotation mode-locked laser device, which belongs to the technical field of laser devices, and can directly provide laser output with high average power and high pulse energy from a laser oscillator. The laser device is mold-locked on the basis of a nonlinear polarization rotation principle, and is structurally characterized in that 976nm semiconductor laser is transmitted into an aspheric surface collimating mirror from the laser device firstly, passes by a dichroic mirror, is transmitted into a photonic crystal fiber through an aspheric surface focusing mirror, then is transmitted onto a dichroic mirror by an aspheric surface mirror in a collimated mode and reflected onto a 1/4 wave plate, passes by a narrow-band filtering plate and an optical isolator, sequentially passes by a half-wave plate and a 1/4 wave plate, finally passes by the dichroic mirror and is infiltrated into the photonic crystal fiber by the aspheric surface focusing mirror, and a resonant cavity of the laser device is formed. The laser device with the cavity has a simple structure, is easy to debug, can be used for producing laser with high average power and high pulse energy directly, and can be used for laser processing, nonlinear transformation and the like.
Owner:BEIJING UNIV OF TECH

InGaAs infrared polarization detector based on surface plasma effect

The invention discloses an InGaAs infrared polarization detector based on a surface plasma effect. The detector comprises a substrate, a lower doping layer, an absorbing layer, an upper doping layer and a metal grating layer, wherein the lower doping layer, the adsorbing layer, the upper doping layer and the metal grating layer are down-up successively deposited on the substrate. The metal grating layer is a two-dimensional sub-wavelength asymmetrically-structured grating, and used for receiving incident light waves. The absorbing layer is used for absorbing light waves. The upper doping layer and the lower doping layer are used for leading out two electrodes of the infrared polarization detector. According to the invention, by use of the two-dimensional sub-wavelength asymmetrically-structured grating, the detector can be coupled to detected light waves to stimulate the surface plasma effect; through the surface plasma effect, the light filed can be localized in the place near the metal and a semiconductor, so efficiency of the detector can be improved; and the electromagnetic vibration strengths generated under irradiation of the incident light in different polarization directions of the asymmetric grating structure are different, so polarized light detection can be achieved.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI

Composite guided wave structure formed by coupling metal nano lines, nano optical fiber and optical nano line

The invention discloses a composite guided wave structure formed by directly efficiently coupling metal nano lines, a nano optical fiber and an optical nano line. The nano optical fiber can be directly coupled with the metal nano lines, and the surface plasma resonance signals of the metal nano lines are excitated or collected by the near-field interaction of a subwavelength dimension. The metal nano lines can also be parallel to the optical nano line firstly by micro-nano operation or the metal nano lines contact with the optical nano line at a certain angle to form coupling, and then the tapered nano optical fiber is coupled with the nano lines. The composite guided wave mode has very high coupling efficiency and simple structure, the output light of the nano lines has very good polarization property, the coupling efficiency can be controlled by regulating the overlapping length of the nano lines of a coupling area or an angle between the nano lines, the simultaneous coupling and excitation of one optical nano line to a plurality of metal nano lines can be realized, a coupler, a beam splitter, a Mach-Zehnder interferometer and an annular resonant cavity component which have a composite structure can be realized, and the composite guided wave mode can be compatible to the traditional optical fiber system.
Owner:ZHEJIANG UNIV

Dielectric film current limiting type vertical cavity surface emitting laser and manufacturing method thereof

The invention relates to a dielectric film current limiting type vertical cavity surface emitting laser and a manufacturing method of the emitting laser, belongs to the field of a semiconductor laser, and solves the problems of low process precision, poor reliability and poor performance consistency in the prior art. The dielectric film current limiting type vertical cavity surface emitting laser structurally comprises an N-surface electrode, a substrate layer, an N type DBR layer, an active layer, a dielectric film current limiting layer, a P type DBR layer and a P-surface electrode in arrangement from bottom to top. The method provided by the invention is characterized in that the N type DBR layer and the active layer sequentially grow on the substrate layer, the N type DBR layer and the active layer are etched into a cylindrical table top, in addition, the substrate layer is exposed, the dielectric film current limiting layer grows on the surface of the cylindrical table top and the surface of the substrate layer, a current limiting window is etched at the dielectric film current limiting layer, and in addition, the active layer is exposed; the P type DBR layer grows on the upper surface of the dielectric film current limiting layer and the upper surface of the active layer in an epitaxy way; the P-surface electrode and the N-surface electrode are respectively manufactured on the upper surface of the P type DBR layer and the lower surface of the substrate layer.
Owner:CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI

High-efficiency probe capable of breaking through diffraction limit and preparation method of high-efficiency probe

The invention discloses a high-efficiency probe capable of breaking through the diffraction limit and a preparation method of the high-efficiency probe. The probe comprises an optical fiber taper and a conductive nanowire fixed at the tail end of the optical fiber taper, wherein the optical fiber taper is an optical dielectric waveguide, the tail end of the optical fiber taper is gradually reduced, the conductive nanowire is a wirelike material with free electrons, and the diameter of the conductive nanowire is in a range of 50-100 nm. The preparation method of the probe comprises steps as follows: S1, the optical fiber taper and the conductive nanowire are prepared; S2, the conductive nanowire with the specific length is taken and fixed at the tail end of the optical fiber taper; preferably, the conductive nanowire adopts a silver nanowire and the diameter is smaller than 300 nm. According to the probe and the preparation method, high-efficiency conversion from an optical mode to a surface plasmon polariton mode is realized, and meanwhile, on the basis of constraint of the surface plasmon polariton to an electromagnetic field, energy is compressed to the degree at which the diffraction limit is broken through; and the efficiency of the near-field probe is greatly increased while the resolution is improved.
Owner:UNIV OF SCI & TECH OF CHINA

Infrared polarizer with metal-medium-metal three-layer wire gating structure

The inventiondiscloses an infrared polarizer with a metal-medium-metal three-layer wire gating structure. The infrared polarizer comprises a transparent substrate, a metal wire gating layer, a dielectricwire gating layer and a metal wire gating layer from bottom to top, wherein the substrate is a medium-wave infrared bandtransparent materialsapphire, the refractive index of the dielectricwire gating layer is in a range of 1.3-4.0, a metal wire gating and a dielectricwire gating have the same cycle and duty ratio, the cycle is in a range of 300-600 mm, and the duty ratio is in a range of 0.4-0.7. In the medium-wave infrared band, when incident light is matched with impedance of the polarizer with the metal-medium-metal three-layer wire gating structure, the incident light is coupled with the wire gating to stimulate magnetic local resonance, TM wave transmittance has a peak value, meanwhile, TE wave transmittance is obviously reduced, the extinction ratio of the wire grating is increased, and the polarization property is improved. The sub-wavelength metal wire grating polarizer has the advantages of flexible design, compact structure, easiness in integration, wider spectrum and field range and the like, and has great application prospects in the aspects of micro-nano devices, integrated optics and the like.
Owner:SHANDONG LABOR VOCATIONAL & TECHN COLLEGE

Tristable liquid crystal display device

A tristable liquid crystal display device comprising: (a) first and second opposing substrates, at least one substrate carrying an alignment coating and each substrate carrying at least one electrode, thereby defining one or more pixel ; (b) a tilted smectic or induced tilted smectic liquid crystal composition placed between substrates; (c) a pair of orthogonally placed polarizers, each polarizer has a polarization axis, and a polarization axis It is aligned with the zero-field optical axis of the tilted smectic or induced tilted smectic mesophase of the liquid crystal composition; the placement of the substrate aligns the liquid crystal composition, and the composition comprises at least one hand represented by the following formula (I) Sexual liquid crystal compound: R-M-N-(P) b - OCH 2 C * HF-CH 2 O(CH 2 ) a R f , wherein M, N and P are independently selected from aromatic rings, heteroaryl rings, alicyclic rings, heteroalicyclic rings, substituted aromatic rings, substituted heteroaryl rings, substituted alicyclic rings and substituted heteroalicyclic rings, each ring is Fused or non-fused rings, the rings are connected to each other by covalent bonds or organic linking groups; R is alkyl, alkenyl, alkoxy or alkoxyalkenyl; * refers to a chiral center; a is 0 or an integer of 1; b is an integer of 0 or 1; R f is a perfluoroether group.
Owner:3M CO
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