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Infrared polarizer with metal-medium-metal three-layer wire gating structure

A metal wire grid and infrared polarization technology, applied in polarizing components, instruments, optics, etc., can solve the lack of infrared polarizers and other problems, achieve the effect of wide spectrum and field of view, optimized polarization characteristics, and compact structure

Inactive Publication Date: 2019-11-15
SHANDONG LABOR VOCATIONAL & TECHN COLLEGE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Most of the above research results have studied the influence and physical mechanism of the electromagnetic resonance effect on the structure transmittance in the form of sub-wavelength micro-nano structures (metal-dielectric-metal), but lack of research on metal-dielectric-metal three-layer wire grids. Research on Structured Infrared Polarizers

Method used

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  • Infrared polarizer with metal-medium-metal three-layer wire gating structure
  • Infrared polarizer with metal-medium-metal three-layer wire gating structure
  • Infrared polarizer with metal-medium-metal three-layer wire gating structure

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Embodiment 1

[0036] like figure 1 The structural schematic diagram of the infrared polarizer of the shown metal-medium-metal three-layer wire grid structure, the substrate 4 is sapphire (Al2 o 3 ), the incident light is 3-5 μm, and it is vertically incident. The low refractive index anti-reflection wire grid layer 2 is MgF 2 , the thickness h1 is 100nm, the material of the metal wire grid is Al, the period p is 500nm, the thickness h1=h2=h3=100nm, and the duty cycle is 0.5.

[0037] Under this structural condition, the relationship between TM and TE transmittance and the wavelength of incident light is as follows: figure 2 As shown, the relationship between the extinction ratio and the wavelength of the incident light is as image 3 As shown, at 4μm, the TM transmittance is 89.5%, the Te transmittance is 5.352E-5, and the extinction ratio is 42.2dB.

[0038] At the magnetic local resonance wavelength of 1.5 μm, the TM wave transmittance is at the peak position, and the transmittance i...

Embodiment 2

[0040] like figure 1 The structural schematic diagram of the infrared polarizer of the shown metal-medium-metal three-layer wire grid structure, the substrate 4 is sapphire (Al 2 o 3 ), the incident light is 3-5 μm, and it is vertically incident. The low refractive index anti-reflection wire grid layer 2 is SiO 2 , the thickness h2 is 60nm, the material of the metal wire grid is Ag, the period p is 300nm, the thickness h1=h3=100nm, and the duty cycle is 0.6.

[0041] Under this structural condition, the relationship between TM and TE transmittance and the wavelength of incident light is as follows: Figure 4 As shown, the relationship between the extinction ratio and the wavelength of the incident light is as Figure 5 As shown, at 4μm, the TM transmittance is 87.8%, the Te transmittance is 6.07E-4, and the extinction ratio is 51.6dB. At the magnetic local resonance wavelength of 1.4 μm, the TM wave transmittance is at the peak position, and the transmittance is 94%.

Embodiment 3

[0043] like figure 1 The schematic diagram of the structure of the infrared polarizer with the metal-dielectric-metal three-layer wire grid structure shown, the substrate is sapphire (Al 2 o 3 ), the incident light is 3-5 μm, and it is vertically incident. The low refractive index anti-reflection wire grid layer 2 is TiO 2 , the thickness h2 is 140nm, the material of the metal wire grid is Au, the period p is 400nm, the thickness h1=h3=100nm, and the duty cycle is 0.7.

[0044] Under this structural condition, the relationship between TM and TE transmittance and the wavelength of incident light is as follows: Figure 6 As shown, the relationship between the extinction ratio and the wavelength of the incident light is as Figure 7 As shown, at 4μm, the TM transmittance is 94.2%, the Te transmittance is 1.61E-2, and the extinction ratio is 37.7dB. At the magnetic local resonance wavelength of 1.9 μm, the TM wave transmittance is at the peak position, and the transmittance i...

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Abstract

The inventiondiscloses an infrared polarizer with a metal-medium-metal three-layer wire gating structure. The infrared polarizer comprises a transparent substrate, a metal wire gating layer, a dielectricwire gating layer and a metal wire gating layer from bottom to top, wherein the substrate is a medium-wave infrared bandtransparent materialsapphire, the refractive index of the dielectricwire gating layer is in a range of 1.3-4.0, a metal wire gating and a dielectricwire gating have the same cycle and duty ratio, the cycle is in a range of 300-600 mm, and the duty ratio is in a range of 0.4-0.7. In the medium-wave infrared band, when incident light is matched with impedance of the polarizer with the metal-medium-metal three-layer wire gating structure, the incident light is coupled with the wire gating to stimulate magnetic local resonance, TM wave transmittance has a peak value, meanwhile, TE wave transmittance is obviously reduced, the extinction ratio of the wire grating is increased, and the polarization property is improved. The sub-wavelength metal wire grating polarizer has the advantages of flexible design, compact structure, easiness in integration, wider spectrum and field range and the like, and has great application prospects in the aspects of micro-nano devices, integrated optics and the like.

Description

technical field [0001] The disclosure relates to an infrared polarizer with a metal-dielectric-metal three-layer wire grid structure. Background technique [0002] The statements in this section merely provide background information related to the present disclosure and do not necessarily constitute prior art. [0003] The metal wire grid polarizer belongs to the subwavelength binary optical element, and its polarization performance is caused by the asymmetry of the metal wire grid polarizer structure. For the infrared polarizer with metal-medium-metal three-layer wire grid structure, there is a magnetic local resonance effect between the metal layer and the dielectric layer, and the strong magnetic field energy is localized in this area, so that the transmission characteristics of the structure occur. The transmission spectrum of the structure can be adjusted by changing the structural parameters of the metal-dielectric-metal wire grid. At present, there is still a lot of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/30
CPCG02B5/3058
Inventor 孔园园颜文超罗海瀚刘定权
Owner SHANDONG LABOR VOCATIONAL & TECHN COLLEGE
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