Monolithic integrated InGaAs near-infrared detector for sub-wavelength micro-polarization grating
A micro-polarization and indium-gallium-arsenic technology, applied in the field of photodetectors, can solve the problems of limitations, insufficient compactness of remote sensing systems, and large angle errors of polarization elements, and achieve the effects of improving extinction ratio, compact structure, and avoiding angle errors
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[0020] The implementation of the present invention will be further described below in conjunction with the accompanying drawings.
[0021] In this embodiment, a sub-wavelength micro-polarization grating is monolithically integrated on a back-illuminated InGaAs linear detector, figure 1 It is a schematic cross-sectional structure diagram of this embodiment. The linear photosensitive chip is prepared by the conventional back-illuminated InGaAs device process, the device size is 128×1, and the size of the photosensitive element is 50μm×50μm; the back of the photosensitive chip is polished and magnetron sputtering SiO 2 Anti-reflection coating; photoresist for electron beam coating, thickness of 1-1.5μm; write required sub-wavelength pattern by electron beam exposure, grating period is 1μm, metal line width is 500nm; ion beam sputtering Al metal Polarization grating, film thickness 800nm. For the distribution of polarization lines, see the attached figure 2 As shown, A, B, C...
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