Manufacturing method of flourescent material taking mg-alpha-sialo<n> as host lattice

A manufacturing method and technology of fluorescent materials, applied in the direction of luminescent materials, chemical instruments and methods, etc., can solve the problems of reducing the luminous quality of fluorescent materials, high cost, and polarized light

Inactive Publication Date: 2012-01-18
钟贤龙
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Although the color rendering of white light produced by the former method is better, the cost of the manufacturing process is high, and the life of the light-emitting diode is not easy to maintain, and the use of the former method requires careful selection of red light that can generate appropriate wavelengths. , blue light, and green light-emitting diodes to be mixed to form the proper white light
In addition, another disadvantage of the former method is that the light-emitting diodes that produce red light, blue light, and green light have different degrees of light attenuation, and after a period of use, they are prone to polarization.
Although this method does not need to be carried out under high temperature and high pressure, and has high safety, carbides (such as: SiC) will be produced during the reaction process; in addition, the generated fluorescent material is easily doped with unreacted carbon, and then Reduce the luminous quality of the fluorescent material

Method used

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  • Manufacturing method of flourescent material taking mg-alpha-sialo&lt;n&gt; as host lattice
  • Manufacturing method of flourescent material taking mg-alpha-sialo&lt;n&gt; as host lattice
  • Manufacturing method of flourescent material taking mg-alpha-sialo&lt;n&gt; as host lattice

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] Magnesium metal, silicon powder, aluminum metal, aluminum oxide, sodium pernitride, ammonium chloride, and europium oxide are mixed in a molar ratio of 0.8:9.2:2:0.4:9.936:4.829:0.03 and placed in a compression molding machine The ingot is punched into an ingot with a diameter of 1.7 cm and a height of 1.0 cm.

[0057] Next, prepare an igniter, which is made of magnesium metal and ferroferric oxide mixed in a molar ratio of 4:1; then coat the igniter on the ingot, and mold it with a compression molding machine. The ingot was formed into a reaction ingot with a diameter of 3.0 cm and a height of 2.4 cm.

[0058] Then, the reaction ingot is placed in a thermal insulation device and aluminum nitride is filled between the reaction ingot and the thermal insulation device to form a reaction unit.

[0059] Finally, place the reaction unit in a closed reactor filled with 5 atmospheres of nitrogen, and then use a tungsten wire coil to energize the reaction ingot to burn the ign...

Embodiment 2-31

[0061] These embodiments are substantially similar to the manufacturing method of the above-mentioned embodiment 1, and the difference lies in: the composition types and composition amounts of the reaction ingots in these embodiments are different from the above-mentioned embodiments. Please refer to Table 1, which illustrates the composition types and composition amounts of the reaction ingots of Examples 2-31 of the present invention.

[0062] Table 1

[0063]

[0064] analyze

Embodiment 1-31

[0066] In order to further understand the physical and chemical properties of the fluorescent material of the above-mentioned examples 1-31 in which Mg-α-SiAlON is the host lattice. First, use an Energy Dispersive Spectrometer (Energy Dispersive Spectrometer; EDS) to analyze the chemical composition of the fluorescent material in which Mg-α-SiAlON is the main lattice in these embodiments, X-ray powder crystal diffraction (X-ray Diffraction; XRD ) to identify the Mg-α-SiAlON of these embodiments as the host lattice of the fluorescent material of the host lattice. Then, photoluminescence (PL) is used to detect the emitted light wavelength of the fluorescent material of the embodiments in which Mg-α-SiAlON is the host lattice.

[0067] Please see figure 1 Shown is the result of the energy distribution spectrometer of the fluorescent material in which Mg-α-SiAlON is the host lattice in Example 1.

[0068] Please refer to Table 2 again, which is the results of X-ray powder crysta...

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Abstract

The invention relates to a manufacturing method of a flourescent material, comprising the steps of supplying a spindle-shaped object which comprises a magnesium source, a silicon source, an aluminum source, an oxygen source, a solid state nitrogen source, an ammonium halide salt and an activator ion source; wrapping an ignition agent on the spindle-shaped object to obtain a reactive spindle; placing the reactive spindle in an adiabatic apparatus and filling ceramic powder between the adiabatic apparatus and the reactive spindle; and igniting the spindle-shaped object by burning the ignition agent to obtain a flourescent material taking Mg-alpha-SiAlO<n> as a host lattice. Therefore, the purposes are achieved that the manufacturing process is simple, time is not consumed and the flourescent material can be manufactured without needing high temperature and high pressure conditions.

Description

technical field [0001] The invention relates to a method for manufacturing a fluorescent material with Mg-α-SiAlON as a host lattice, in particular to a method for manufacturing a fluorescent material with Mg-α-SiAlON as a host lattice with a simple manufacturing process and no time-consuming. Background technique [0002] With the vigorous development of science and technology, in addition to bringing convenience to human life, technology has also brought human reflection on over-exploitation and abuse of resources. Therefore, government units and environmental protection groups are vigorously advocating issues and policies related to energy saving and environmental protection, and R&D personnel have also begun to conduct research and development on these issues and policies. [0003] A light-emitting diode is a solid-state semiconductor component that utilizes the internal electrons and holes to cooperate with each other to release energy in the form of light. The light-e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/64
CPCC09K11/64C09K11/7734C09K11/0883C09K11/77348
Inventor 钟贤龙张丰胜陈焕煜黄姝绮
Owner 钟贤龙
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