Silicon-based group III-V nanotubes and micro-tubes as well as preparation method thereof

Abstract

The invention discloses silicon-based group III-V nanotubes and micro-tubes as well as a preparation method thereof. The nanotubes and the micro-tubes are of cylindrical hollow tubular structures with non-closed ends, which are formed by self-crimping of epitaxially grown group III-V strain semiconductor films on a single crystal Si substrate, the diameters of the nanotubes and the micro-tubes are 1 nm to 100 microns, and the lengths of the nanotubes and the micro-tubes are 1 micron to 1 mm. The tubular structures have great application value in the fields of silicon-based photonics, micro-machine systems and sensing. The invention integrates mutated epitaxial growth from bottom to top with a photoetching corrosion technology from top to bottom. Through lateral corrosion of group III-V sacrificial layers, the group III-V strain dual-layer films are released from Si and are crimped to tubes. The method is compatible with a process of group III-V photoelectron and micro-electronics devices and has the advantages of simple tube production process, good tube appearance, controllable tube size and the like, and furthermore, a large area of group III-V nanotube or micro-tube arrays with consistent rule are easily formed on the Si.

Description

technical field [0001] The invention relates to a nanotube and microtube material and a preparation method thereof, belonging to the field of semiconductor materials. Background technique [0002] In recent years, in the field of nanotechnology, especially in the field of nanomaterials, nanotubes and microtubes have attracted the attention of many researchers at home and abroad. The reason is that nanotubes and microtubes not only have excellent and unique structures, shapes, mechanical, mechanical, thermal, optical, and electrical properties, but also have many new physical laws and effects waiting to be discovered. Physical electronics, optics, biomedicine and other fields have shown very broad application prospects and important application value. Carbon nanotubes and microtubes are the earliest and most widely studied. Carbon nanotubes (Carbon nanotube, CNT) were first successfully prepared by Iijima et al. in 1991 [S.Iijima, Nature, 354(1991) 56]. Commonly used carbo...

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Problems solved by technology

[0015] The process of separating III-V nanotubes or microtubes from the host substrate using the above-mentioned transfer technology is relatively complicated, and it is easy to cause structural defects or mechanical deformation of the tubes

In particular, the ultrasonic process used in Solution casting can easily break or shatter the tube

In addition, the solution casting and SOS transfer processes are uncontrollable, and the positioning of nanotubes or microtubes on Si substrates cannot be realized

Although fiber optic tapered transfer can solve most of the problems of solution casting and SOS transfer, it can only transfer independent unsupported microtubes with a diameter of several microns, and the operation cost is high

[0016] In summary, the above methods for preparing nanotubes and microtubes on Si substrates are not ideal, especially the optical properties of the prepared Si-based nanotubes and microtubes are far from reaching the level of practical silicon-based photonic devices. basic requirements

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