Unlock instant, AI-driven research and patent intelligence for your innovation.

MRAM and manufacturing method thereof

A manufacturing method and metal wire technology, which can be used in the manufacture/processing of electromagnetic devices, magnetic field-controlled resistors, digital memory information, etc., can solve problems such as the inability to obtain a sufficiently flat bottom electrode.

Active Publication Date: 2019-01-15
CETHIK GRP +1
View PDF7 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The main purpose of this application is to provide a kind of MRAM and its manufacturing method, to solve the problem of not being able to obtain a sufficiently flat bottom electrode in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MRAM and manufacturing method thereof
  • MRAM and manufacturing method thereof
  • MRAM and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0061] MRAM fabrication methods include:

[0062] Prepare a substrate 1 including a substrate and a structure on the substrate prepared through a previous process;

[0063] On the surface of the substrate 1, a metal wire layer 2 is formed by a damascene process, such as figure 2 As shown, the metal wire layer 2 includes a plurality of spaced metal wire parts;

[0064] Depositing NDC on the surface of each metal wire portion away from the substrate 1 to form a barrier layer 3;

[0065] Formation of SiO by PECVD on barrier layer 3 using TEOS 2 layer, forming image 3 The dielectric layer 4 shown;

[0066] The through hole 5 including the first part 51 and the second part 52 is formed by a double damascene process, such as Figure 4 As shown, the above-mentioned first portion 51 is close to the above-mentioned substrate 1, the above-mentioned second portion 52 communicates with the above-mentioned first portion 51, and the depth of the first portion 51 is The depth of the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present application provides an MRAM and a manufacturing method thereof. The manufacturing method comprises the following steps: step S1, setting a metal wire layer on the surface of the substrate; Step S3, setting a dielectric layer on the surface of the metal conductor layer which is far away from the substrate; Step S4, forming a plurality of spaced-apart through holes by a double Damascusprocess, the through holes comprising a first part and a second part, the depth of the second part being smaller than the depth of the first part, and the width of the second part being larger than the width of the first part; S5, filing bottom electrode material in each through hole to form bottom electrode, wherein that surface of the bottom electrode far away from the substrate and the surfaceof the dielectric layer far away from the substrate are on the same plane, and the bottom electrode material is a non-copper conductive material. The method avoids the two-step process of first filling copper in the through hole and then setting the bottom electrode on the copper, and avoids the problem that the flat surface cannot be formed due to the low hardness of the Cu because the Cu is notset.

Description

technical field [0001] The present application relates to the field of semiconductor storage, and in particular, relates to an MRAM and a manufacturing method thereof. Background technique [0002] Magnetic Random Access Memory (MRAM) is a new type of non-volatile memory. Compared with other types of memory at present, it has fast read and write speeds, can achieve unlimited erasing and writing, and is easy to integrate with current semiconductor processes. In addition, the MRAM using spin current to realize the spin transfer torque (Spin transfer torque, STT) of magnetic moment reversal can realize the miniaturization of the memory cell size. These advantages make MRAM the main development direction of new memory in the future. [0003] The main functional unit in MRAM is MTJ unit, and its structure mainly includes magnetic free layer / nonmagnetic oxide layer (MgO) / magnetic pinning layer. Driven by an external magnetic field or current, the direction of the magnetic moment...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/12G11C11/16H10N50/10H10N50/01
CPCG11C11/161H10N50/01H10N50/10
Inventor 王雷刘鲁萍
Owner CETHIK GRP