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Device and method for measuring residual stress of wafer

A residual stress and wafer technology, used in measuring devices, measuring force, force/torque/work measuring instruments, etc., can solve the problem of inability to directly obtain the residual stress of the structural layer, improve the accuracy and convenience of measurement, avoid The effect of resource consumption and errors

Active Publication Date: 2019-01-18
CHENGDU CORPRO TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, for device processes with wafer bonding, such as pressure sensors and gyroscopes, optical methods cannot directly obtain the deformation of the structural layer after bonding, so the residual stress on the structural layer cannot be directly obtained

Method used

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  • Device and method for measuring residual stress of wafer
  • Device and method for measuring residual stress of wafer
  • Device and method for measuring residual stress of wafer

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Embodiment Construction

[0037] In order to make the purpose, technical solutions and advantages of the embodiments of the invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are Some, but not all, embodiments of the invention. The devices of the embodiments of the invention generally described and illustrated in the drawings herein may be arranged and designed in a variety of different configurations. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0038] This embodiment provides a device and method for measuring wafer residual stress.

[0039] The invention can realize the measurement of wafer residual stress, especially the stres...

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Abstract

The invention discloses a device and a method for measuring residual stress of a wafer. The device comprises a sensitive structure and piezoresistive strips, wherein the sensitive structure is formedby a central flat plate and four beam-shaped arms extending outwards from the periphery of the central flat plate; each beam-shaped arm is provided with the piezoresistive strip, and the beam-shaped arm is connected to a wafer substrate or a surface to be measured; the four piezoresistive strips are connected to form a stress measurement bridge; and the device adopts a special sensitive structure,so that the influence of a Poisson ratio on the stress is reduced, the stress of the sensitive structure is obtained in an electric manner, a defect that an optical method cannot measure the stress of a structural layer after bonding is overcome, the residual stress on the wafer is measured, and even the residual stress generated by a wafer bonding process is measured.

Description

technical field [0001] The invention relates to a device and method for measuring wafer residual stress, in particular to a device and method for measuring wafer residual stress in MEMS technology. Background technique [0002] With the development of micromechanical technology, more and more MEMS devices have been commercialized and even military used in recent years. Among them, MEMS gyroscopes have achieved great success in automotive electronics, inertial navigation and portable electronic devices. [0003] MEMS devices usually contain movable structures such as beams and membranes, and their characteristics will be affected by the residual stress of each process step, causing the processing results to deviate from the design values. The elastic coefficient, resonant frequency, temperature characteristics, and buckling characteristics are usually affected by the residual stress. In order to improve the quality of the process, it is necessary to monitor the process cond...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/22G01L5/00
CPCG01L1/2262G01L5/0047
Inventor 梁冰
Owner CHENGDU CORPRO TECH CO LTD
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