Image detection device and manufacturing method thereof
A technology of an image detection device and a manufacturing method, which is applied to radiation control devices, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as difficulty in manufacturing, size reduction, etc.
Active Publication Date: 2021-03-02
TAIWAN SEMICON MFG CO LTD
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
[0004] However, as features continue to shrink in size, their fabrication becomes more difficult to implement
Therefore, it has become a challenge to form reliable semiconductor devices (eg, image detection devices) at increasingly smaller sizes.
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[0053] The following disclosure provides many different embodiments, or examples, for implementing the various features of the invention. However, the following disclosure describes specific examples of each component and its arrangement in order to simplify the disclosure. Of course, these are just examples and are not intended to limit the present invention. For example, if the following disclosure states that a first feature is formed on or over a second feature, it means that the formed first feature and the second feature are directly The embodiment of contact also includes the implementation that an additional feature can be formed between the first feature and the second feature, so that the first feature and the second feature may not be in direct contact. example. Additionally, the disclosure may repeat reference numerals and / or words in various examples. Repetition is for simplicity and clarity, and does not self-specify the relationship between the various embodi...
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A manufacturing method of an image detection device includes providing a base with a front surface and a back surface. The above method includes removing a first portion of the substrate to form a first trench. The above method includes forming a first isolation structure in the first trench, and the first isolation structure has an upper surface. The method includes removing a second portion of the first isolation trench and a third portion of the substrate to form a second trench extending through the first isolation structure and into the substrate. The above method includes forming a second isolation structure in the second trench. The above method includes forming a light detection area in the substrate. The above method includes removing a fourth portion of the substrate to expose a first bottom of the second isolation structure and the backside of the light detection region.
Description
technical field [0001] Embodiments of the present invention relate to a semiconductor technology, and in particular to an image detection device and a manufacturing method thereof. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in IC materials and design have produced multiple IC generations. Each generation of ICs has smaller and more complex circuits than the previous generation. However, these advances have also increased the complexity of handling and manufacturing ICs. [0003] In the course of IC evolution, functional density (ie, the number of interconnected devices per die area) has generally increased, while geometry size (ie, the smallest component (or line) that can be created using a fabrication process) has decreased. This scaling down process generally brings benefits through increased production efficiency and associated cost reductions. [0004] However, as features con...
Claims
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IPC IPC(8): H01L27/146
CPCH01L27/1463H01L27/14683H01L27/14621H01L27/14627H01L27/14629H01L27/1464H01L27/14685H01L27/14689H01L21/02274H01L21/0228H01L21/31053
Inventor 张朝钦李昇展周正贤黄琮伟林明辉林艺民
Owner TAIWAN SEMICON MFG CO LTD