Power-on mechanism

Abstract

The invention provides a power-on mechanism, belonging to the chip test power-on technical field. The power-on mechanism comprises a base, a static insulating plate, a movable insulating plate, an elastic component, and a power-on probe. The base comprises a support part and a cantilever part. The static insulating plate is connected with the supporting part and has a first conductive sheet. The movable insulating plate is connected with the support part and has a second conductive sheet arranged opposite to the first conductive sheet. The movable insulating plate has a movement stroke relative to the static insulating plate so as to make the second conductive sheet come into contact with or separate from the first conductive sheet. The elastic component is connected with the cantilever part and abuts with the movable insulating plate in a force-adjustable manner, so that the first conductive sheet and the second conductive sheet are in contact with each other. The power-on probe is connected to an end of the second insulating plate remote from the support part. The power-on mechanism provided by the embodiment of the invention can provide protection to chips during the testing process, prevent the power-on probe from generating indentation on the chips, and ensure the chip quality.

Description

technical field [0001] The invention relates to the technical field of chip test power-on, in particular to a power-on mechanism. Background technique [0002] The semiconductor diode (Laser Diode, LD) chip is the core component of the semiconductor laser, which determines the luminous quality of the semiconductor laser. Therefore, in order to ensure the quality of semiconductor lasers, it is necessary to test and screen LD chips. Usually, the power-on probe is used as the power-on mechanism. When the power-on probe touches the LD chip, the LD chip is powered on and emits light, and then the screening is completed by testing the luminous quality of the LD chip. [0003] When the power-on mechanism provided in the related art is in use, it is difficult to sense whether the power-on probe has contacted the LD chip, resulting in excessive contact force between the power-on probe and the LD chip. In this case, for an LD chip with a thickness of 100 μm, it is very easy to leave...

AI Technical Summary

Problems solved by technology

[0003] When the power-on mechanism provided in the related art is in use, it is difficult to sense whether the power-on probe has touched the LD chip, resulting in excessive contact force between the power-on probe and the LD chip

In this case, for an LD chip with a thickness of 100 μm, it is very easy to leave indentations on the LD chip when the power-on probe is tested, which affects the appearance quality of the LD chip after testing.

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