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Multilayer Storage in Ferroelectric Memory

A ferroelectric memory and memory technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as complex components and operations, and unreliability

Active Publication Date: 2020-10-02
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Some FeRAMs rely on dividing the sense window of a memory mechanism multiple times in an attempt to generate different memory states, but doing so may be less reliable and may require more complex components and operations

Method used

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  • Multilayer Storage in Ferroelectric Memory
  • Multilayer Storage in Ferroelectric Memory
  • Multilayer Storage in Ferroelectric Memory

Examples

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Embodiment Construction

[0021] Techniques, methods, and apparatus for multi-layer access, sensing, and other operations of ferroelectric memories are described. In some examples, sensing may be based on a plurality of charges associated with the memory cell, and may relate to a first charge associated with the dielectric of the ferroelectric memory cell and a second charge associated with the polarization of the ferroelectric memory cell . Sensing of these two charges can avoid the problems and disadvantages associated with partitioning the sensing window of one storage type (eg, charge associated with polarization) into multiple segments to produce multiple memory states. Additionally, in some cases, when using isolated sense amplifiers, two sensing cycles may be performed to sense the three memory layers from the ferroelectric cells. As an example, one layer may be based on dielectric-dependent charges and two layers may be based on polarization-dependent charges. As another example, two layers m...

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Abstract

This application relates to multi-level storage in ferroelectric memory. This disclosure describes methods, systems and devices for operating one or several ferroelectric memory cells. In some examples, multi-level access, sensing, and other operations for ferroelectric memory may be based on sensing multiple charges, including a first charge associated with the memory cell's dielectric and a charge associated with the memory cell's Polarize the associated second charge. In some cases, multi-level access, sensing, and other operations may be based on: transferring a first charge associated with the dielectric of the memory cell to a sense amplifier; isolating the sense amplifier; activating the sense amplifier; an amplifier; transferring a second charge associated with the polarization of the memory cell to the sense amplifier; and activating the sense amplifier a second time.

Description

[0001] cross reference [0002] This patent application claims priority to PCT Application No. PCT / US2017 / 036148, filed on June 6, 2017, entitled "Multi-Level Storage in Ferroelectric Memory", The aforementioned PCT application claims priority to Kawamura's U.S. Patent Application No. 15 / 194,178, filed June 27, 2016, entitled "Multi-Level Storage in Ferroelectric Memory," Each of these cases is assigned to its assignee and the entirety of each of these cases is incorporated herein by reference. technical field [0003] The technical field relates to multi-level storage in ferroelectric memory. Background technique [0004] The following relates generally to memory devices and, more particularly, to multi-level access, sensing, and other operations for ferroelectric memories using multiple charges. [0005] Memory devices are widely used to store information in various electronic devices, such as computers, wireless communication devices, cameras, digital displays, and the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/22
CPCG11C11/221G11C11/2293G11C11/2259G11C11/2273G11C11/2275G11C11/5657
Inventor C·J·卡瓦姆拉
Owner MICRON TECH INC