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Nitrogen containing single crystal diamond materials optimized for magnetometry applications

A technology for single crystal diamond and magnetic force measurement, which is applied in the directions of polycrystalline material growth, single crystal growth, single crystal growth, etc.

Active Publication Date: 2019-03-15
ELEMENT SIX TECH LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Such a result makes NV - Defect emerges as competing candidate for solid-state quantum information processing (QIP)

Method used

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  • Nitrogen containing single crystal diamond materials optimized for magnetometry applications
  • Nitrogen containing single crystal diamond materials optimized for magnetometry applications
  • Nitrogen containing single crystal diamond materials optimized for magnetometry applications

Examples

Experimental program
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Effect test

Embodiment

[0069] According to certain embodiments, the following diamond growth conditions may be used:

[0070] Microwave power = 5kW

[0071] Pressure = 230 Torr

[0072] Hydrogen flow = 580 standard cubic centimeters per minute (sccm)

[0073] Methane flow = 12 sccm

[0074] Nitrogen dopant = 30 sccm in H 2 Medium 1000ppm N 2

[0075] Parameters such as nitrogen levels can vary depending on the desired nitrogen concentration in the final product. Optionally, oxygen can also be added to the growth process. After growth, the single crystal diamond material was treated using an optimized irradiation and annealing process as previously described. While the growth of nitrogen-containing diamond materials followed by irradiation and annealing has been previously disclosed in the art, the difference here is that the growth, irradiation and annealing steps are optimized according to the figure of merit defined herein for magnetometry applications . The product material can then be c...

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PUM

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Abstract

A single crystal diamond material comprising: neutral nitrogen-vacancy defects (NV0); negatively charged nitrogen-vacancy defects (NV-); and single substitutional nitrogen defects (Ns) which transfertheir charge to the neutral nitrogen- vacancy defects (NV0) to convert them into the negatively charged nitrogen-vacancy defects (NV-), characterized in that the single crystal diamond material has amagnetometry figure of merit (FOM) of at least 2, wherein the magnetometry figure of merit is defined by (I) where R is a ratio of concentrations of negatively charged nitrogen-vacancy defects to neutral nitrogen-vacancy defects ([NV-] / [NV0]), [NV-] is the concentration of negatively charged nitrogen- vacancy defects measured in parts-per-million (ppm) atoms of the single crystal diamond material,[NV0] is a concentration of neutral nitrogen-vacancy defects measured in parts-per-million (ppm) atoms of the single crystal diamond material, and T2' is a decoherence time of the NV- defects, whereT2' is T2* for DC magnetometry or T2 for AC magnetometry.

Description

technical field [0001] Embodiments of the present invention relate to nitrogen-containing single crystal diamond material optimized for magnetometry applications. It is also envisaged that while the single crystal diamond material described herein is optimized for magnetometry applications, the material is also suitable for other applications utilizing negatively charged nitrogen-vacancy defects within the diamond lattice. Background technique [0002] Point defects, especially quantum spin defects and / or optically active defects, in synthetic diamond materials have been proposed for various imaging, sensing and processing applications including, for example: luminescent labels; magnetometers; spin resonance devices such as Nuclear magnetic resonance (NMR) and electron spin resonance (ESR) devices; spin resonance imaging devices for magnetic resonance imaging (MRI); quantum information processing devices, such as for quantum communication and computing; magnetic communicatio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/02C30B29/04C30B33/04
CPCC30B25/02C30B29/04C30B33/04C30B31/20C30B30/04
Inventor W·卢G·S·布鲁斯A·M·埃德蒙斯M·L·马卡姆A·D·斯泰西H·K·迪隆
Owner ELEMENT SIX TECH LTD