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A method and a device for improving the reliability of NAND flash memory data

A reliability and data technology, applied in the fields of electrical digital data processing, generation of response errors, instruments, etc., can solve problems such as equipment reliability reduction, data loss, and the influence of NAND flash memory erasing and rewriting times is not considered, and the service life is achieved. Long, data-reliable results

Active Publication Date: 2019-03-29
珠海妙存科技有限公司
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Problems solved by technology

[0008]In the existing design, in the life cycle of NAND flash memory, the ECC error correction bit threshold for judging the data health status is set to a fixed value, without considering the entire Influence of NAND flash memory's real erasing and writing times in the life cycle
The result of this is that in the early stage of the life cycle, the number of data moves may be increased, and invalid write operations may be increased; while in the later stage of the life cycle, the timing of data refresh may be delayed, resulting in data loss
These reduce the service life of NAND flash memory and reduce the reliability of equipment

Method used

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  • A method and a device for improving the reliability of NAND flash memory data

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Embodiment Construction

[0043] The idea, specific structure and technical effects of the present invention will be clearly and completely described below in conjunction with the embodiments and accompanying drawings, so as to fully understand the purpose, scheme and effect of the present invention. It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The same reference numbers are used throughout the drawings to indicate the same or similar parts.

[0044] The subject matter presented herein is particularly pointed out and distinctly claimed in the concluding portion of the specification. However, the organization and method of operation of the invention, together with its objects, features and advantages, are best understood by referring to the following detailed description when read with the accompanying drawings.

[0045] Since the illustrated embodiments of the invention can in most c...

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Abstract

The invention relates to a method and a device for improving the reliability of NAND flash memory data. Aiming at the shortcomings of the prior art, a method for dynamically adjusting the ECC error correction bit threshold for judging the health status of the data along with the real erasing times of the flash memory block is designed. The method comprises the following steps: S100) sending a readoperation to the first block in the flash memory; S200) obtaining the actual erasing times of the current block; S300) calculating an ECC error correction bit threshold E of the current block based on the actual number of erasures; S400) comparing the ECC error correction bits D of the data in the current block with the ECC error correction bit threshold E of the current block, and if D) E, executing step S500; S500) copying all the valid data in the current block to the second block. Through the method and steps, the fine management of the data health status check operation is achieved, so that the data is more reliable and the service life of the entire NAND flash memory device is longer.

Description

technical field [0001] The invention relates to the technical field of flash memory data management, in particular to a method and device for improving the reliability of NAND flash memory data. Background technique [0002] As an important storage device, NAND flash memory can provide high storage performance, but there are also problems such as erasing and writing life, data retention, and read interference. How to maintain the correctness of data as much as possible during use and prevent data loss before the NAND flash media is not damaged is a key link in the design of the flash translation layer (FTL). The present invention improves the method of checking data ECC (Error Checking and Correcting, instruction error correction technology) error correction, so as to more effectively judge the health status of data, and re-refresh data in advance, so as to ensure that data will not be lost. [0003] There is a problem of data retention in NAND flash memory devices. Data ca...

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Application Information

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IPC IPC(8): G06F11/10
CPCG06F11/1044Y02D10/00
Inventor 龚晖
Owner 珠海妙存科技有限公司
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