Manufacturing method of metal wire and array substrate, array substrate

Abstract

The invention relates to the technical field of display, in particular to a manufacturing method of a metal wire, a manufacturing method of an array substrate and the array substrate. The manufacturing method of the metal wire comprises the following steps of forming a metal layer on a substrate; forming a photoresist pattern on the metal layer, wherein the photoresist pattern comprises a first photoresist pattern and a second photoresist pattern located on the first photoresist pattern, and the orthographic projection of the first photoresist pattern on the metal layer is located in the orthographic projection of the second photoresist pattern on the metal layer; carrying out a patterning process in the metal layer to form a middle metal wire; stripping the second photoresist pattern fromthe first photoresist pattern; and carrying out a patterning process on the middle metal wire to form the metal wire. By virtue of the scheme, the gradient angle of the cross section of the metal wire can be reduced, so that the follow-up metal wire crossing is facilitated, and the product yield and the display quality are greatly improved.

Description

technical field [0001] The present application relates to the field of display technology, and in particular, relates to a method for manufacturing a metal wire, a method for manufacturing an array substrate, and the array substrate. Background technique [0002] With the gradual development of display products in the direction of large size, the metal wires of the display panel need to be more and more conductive, which requires the metal wires to be thick enough; at the same time, in order to meet high PPI (Pixels Per Inch, pixel density) and The requirement of high aperture ratio requires the metal wire to be narrow enough. That is to say, the current metal wire is gradually developing in the direction of thick and narrow. [0003] Since there are cross-line layouts in various situations such as gate and source-drain, gate and pixel electrode, source-drain and pixel electrode in the backplane process, various thick and narrow metal lines are required, and the metal lines ...

AI Technical Summary

Problems solved by technology

[0003] Since there are cross-line layouts in various situations such as gate and source-drain, gate and pixel electrode, source-drain and pixel electrode in the backplane process, various thick and narrow metal lines are required, and the metal lines The slope angle of the cross-section must be gentle enough, otherwise it is very easy to cause the upper span metal wire to break, resulting in various electrical failures

At present, the slope angle of the cross section of the conventionally etched metal line is relatively large, and the slope angle gradually increases with the increase of the thickness of the metal film, which is very easy to cause the breakage of the upper spanning metal line

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