Exposure photomask and graphic modeling method of photoresist material

Abstract

The invention discloses an exposure photomask which comprises a first exposure area, a second exposure area and a shading area encircling the first exposure area and the second exposure area, wherein the second exposure area is arranged adjacently to the border of the first exposure area; the second exposure area comprises a first sub-exposure area, ... an M sub-exposure area that are arranged sequentially and in parallel in the direction gradually far away from the first exposure area; the exposure resolution ratio of the n sub-exposure area is greater than that of the (n+1) sub-exposure area; M is an integer which is more than 2; n is equal to 1, 2, 3, ..., M-1. The invention also discloses a graphic modeling method of a photoresist material. Secondary exposure and developing are performed on a graphic photoresist structural layer by the exposure photomask provided by the invention, so that the taper angle of the photoresist structural layer can be changed and adjusted at a specific location.

Description

technical field [0001] The invention belongs to the technical field of displays, relates to an exposure mask, and also relates to a photoresist patterning method using the exposure mask. Background technique [0002] At present, in the process of manufacturing display substrates, an array process is generally used to form a patterned array on the base substrate to obtain a display substrate; there are many types of display substrates, such as common thin-film transistor array substrates, color filter substrates, organic light-emitting diodes, etc. Array substrates or low-temperature polysilicon array substrates, etc. [0003] The display substrate is usually prepared by multiple patterning processes. Each patterning process generally includes the steps of film formation, glue coating, exposure, development, and etching. That is, a layer of substrate film is first formed on the base substrate by the film formation process. Then utilize glue-coating process to coat photoresis...

AI Technical Summary

Problems solved by technology

However, if the lower film layer under the photoresist structure layer 4 is a heat-sensitive material by using high-temperature baking, the use of high-temperature baking to reduce the slope angle α will be greatly limited.

In addition, by using high-temperature baking, the slope angle α of each position of the entire photoresist structure layer 4 changes accordingly, and it is impossible to only control and reduce the slope angle α of a specified position. However, the slope angle α of some positions α may not need to be reduced or reduced but the effect is not good

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