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A kind of preparation method of solar cell selective emitter

A solar cell and selective technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of high surface concentration and affect the performance of solar cells, achieve low surface concentration, improve emitter performance, and facilitate adjustment

Active Publication Date: 2021-02-26
JA SOLAR +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the surface concentration of the lightly doped region in the selective emitter prepared by the existing one-step diffusion method is high, which affects the performance of the solar cell

Method used

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  • A kind of preparation method of solar cell selective emitter
  • A kind of preparation method of solar cell selective emitter
  • A kind of preparation method of solar cell selective emitter

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] This embodiment provides a method for preparing a solar cell selective emitter, comprising the following steps:

[0049] Step 101, using HCl+H 2 o 2 and hydrofluoric acid to clean the P-type silicon substrate after texturing;

[0050] Step 102, using atmospheric pressure chemical vapor deposition (APCVD) to sequentially grow a layer of phosphosilicate glass (PSG) film (as the doping layer 2 containing the doping source) and a layer of oxide film on the entire surface of the cleaned silicon substrate 1. Silicon film (as a barrier layer 3), that is, the phosphosilicate glass film is located between the silicon oxide film and the silicon substrate 1, such as figure 1 shown;

[0051] The thickness of the phosphosilicate glass film is 100nm, the growth temperature is 480°C, and the phosphorus concentration in the grown phosphosilicate glass film is 10%;

[0052] The thickness of the silicon oxide layer is 100nm, and the growth temperature is 490°C;

[0053] Step 103, ac...

Embodiment 2

[0058] This embodiment provides a method for preparing a solar cell selective emitter, comprising the following steps:

[0059] Step 201, using HCl+H 2 o 2 and hydrofluoric acid to clean the N-type silicon substrate after texturing;

[0060] Step 202, using plasma-enhanced chemical vapor deposition (PECVD) to sequentially grow a layer of borosilicate glass (BSG) film (as a doping layer containing a doping source) and a layer of silicon oxide film on the entire surface of the cleaned silicon substrate (as a barrier layer), that is, the borosilicate glass film is located between the silicon oxide film and the silicon substrate;

[0061] The thickness of the borosilicate glass film is 60 nm, the growth temperature is 380° C., and the concentration of boron in the grown borosilicate glass film is 3.4%.

[0062] The thickness of the silicon oxide layer is 60nm, and the growth temperature is 490°C;

[0063] Step 203, according to the pattern design of the metal contact electrode...

Embodiment 3

[0068] This embodiment provides a method for preparing a solar cell selective emitter, comprising the following steps:

[0069] Step 301, using HCl+H 2 o 2 and hydrofluoric acid to clean the N-type silicon substrate after texturing;

[0070] Step 302, using plasma enhanced chemical vapor deposition (PECVD) to sequentially grow a layer of lower silicon oxide film (as a filter layer) with a thickness of 5 nm on the entire surface of the cleaned silicon substrate, and a borosilicate glass film with a thickness of 80 nm ( As a doping layer containing a dopant source), and an upper silicon oxide film (as a barrier layer) with a thickness of 80nm, that is, the phosphosilicate glass film is located between the two silicon oxide films;

[0071] Among them, the growth temperature of the lower silicon oxide film is 490°C;

[0072] The growth temperature of the borosilicate glass film is 380°C, and the concentration of boron in the grown borosilicate glass film is 3.4%;

[0073] The ...

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Abstract

The invention discloses a method for preparing a selective emitter of a solar cell. The method controls the lightly and heavily doped regions through different diffusion sources, so that the lightly and heavily doped regions can be flexibly adjusted during the preparation process, thereby Emitter for better performance. The method includes the following steps: (1) providing a silicon substrate; (2) setting a diffusion barrier layer containing a dopant source on the non-metal contact area on the surface of the silicon substrate, the diffusion barrier layer containing a dopant source includes a doped layer containing a dopant source, and a barrier layer arranged on the doped layer; (3) doping the silicon substrate and allowing the dopant source in the doped layer to enter the non-metal contact region, and a non-metal containing source silicon glass layer is arranged on the surface of the silicon substrate A lightly doped region of the selective emitter is formed in the contact region, and a heavily doped region of the selective emitter is formed in a metal contact region not provided with a source-containing silicon glass layer on the surface of the silicon substrate.

Description

technical field [0001] The invention belongs to the field of solar photovoltaic modules, and in particular relates to a preparation method of a solar cell selective emitter. Background technique [0002] A solar cell is a semiconductor device that converts light energy into electrical energy. Lower production costs and higher energy conversion efficiency have always been the goals pursued by the solar cell industry. In order to obtain high-efficiency solar cells, the surface must have good passivation and low surface recombination rate, so as to obtain high opening voltage, current and efficiency. However, in the existing common crystalline silicon solar cell manufacturing technology, uniformly doped emitters are commonly used. In order to reduce the surface recombination of the emitter and improve the short-wave response of crystalline silicon solar cells, the surface doping concentration of the emitter must be reduced; however, in order to reduce the metal contact recombi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/0352H01L31/068H01L31/18
CPCH01L31/02161H01L31/03529H01L31/068H01L31/1804H01L31/1868Y02E10/547Y02P70/50
Inventor 张俊兵王玉林陈泉阳
Owner JA SOLAR