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Semiconductor device

一种半导体、基底的技术，应用在半导体器件、半导体/固态器件制造、半导体/固态器件零部件等方向，能够解决失效、增加寄生电容短路故障、半导体装置性能下降等问题

Active Publication Date: 2019-05-14
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As the density of these miniaturized 3D semiconductor devices increases and the critical dimension decreases, without proper structural design, the parasitic capacitance between interconnections and possible short-circuit failures will increase, resulting in the failure of semiconductor devices. performance degradation or failure

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
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Embodiment Construction

[0021] Various example embodiments will now be described more fully hereinafter with reference to the accompanying drawings. Throughout the application, like reference numerals may refer to like elements.

[0022] figure 1 is a plan view illustrating a semiconductor device of an example embodiment of the inventive concept. Figure 2 to Figure 5 are respectively along figure 1 Cross-sectional views taken along line II', line II-II', line III-III' and line IV-IV' of .

[0023] refer to figure 1 and figure 2 The semiconductor device 100 includes a fin structure (for example, a first fin structure 110A and a second fin structure 110B) and a gate structure 130 . The first fin structure 110A and the second fin structure 110B may extend in the first direction X and may be spaced apart from each other in the second direction Y. Referring to FIG. The first direction X may be perpendicular to the second direction Y. The gate structure 130 may extend in the second direction Y and...

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Abstract

The invention provides a semiconductor device. The semiconductor device includes a substrate, a fin structure protruding from the substrate in a direction perpendicular to an upper surface of the substrate, the fin structure including first fin regions extending in a first direction and second fin regions extending in a second direction different from the first direction, source / drain regions disposed on the fin structure, a gate structure intersecting the fin structure, a first contact connected to one of the source / drain regions, and a second contact connected to the gate structure and beingbetween the second fin regions in a plan view.

Description

[0001] This application claims Korean Patent Application No. 10-2017-0147238 filed with the Korean Intellectual Property Office on November 7, 2017 and Korean Patent Application No. 10-2017-0165794 filed with the Korean Intellectual Property Office on December 5, 2017 The priority of the patent application, the disclosure of this Korean patent application is hereby incorporated by reference in its entirety. technical field [0002] Example embodiments of inventive concepts relate to a semiconductor device, and more particularly, to a semiconductor device capable of reducing parasitic capacitance and short faults. Background technique [0003] Semiconductor devices are divided into memory devices that store data and logic devices such as processors that process data. As demands for miniaturized, high-performance, low-power semiconductor devices increase, semiconductor devices having a three-dimensional (3D) structure have been developed. As the density of these miniaturized ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/423H01L29/06H01L21/336
CPCH01L21/76229H01L23/485H01L21/823481H01L21/823437H01L21/823475H01L27/0886H01L29/0847H01L29/66545H01L29/66636H01L21/823821H01L27/0924H01L29/4238H01L29/41791H01L29/0649H01L21/02636H01L23/528H01L27/0207H01L21/823431H01L21/823418H01L21/0274H01L21/3065H01L21/3086H01L21/76224H01L21/31116
Inventor 金成玟金洞院
Owner SAMSUNG ELECTRONICS CO LTD