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A kind of image sensor and preparation method thereof

An image sensor and photosensitive device technology, applied in the semiconductor field, can solve the problems of increasing the difficulty of image sensor preparation and not being suitable for silicon thickness image sensors, etc., and achieve the effects of easy operation, improved absorption, and increased optical path

Active Publication Date: 2021-04-06
淮安西德工业设计有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Although the above-mentioned image sensors in the prior art can improve the absorption of light by the image sensor to a certain extent, there are still certain defects. For example, the method of adjusting the optical path of light through reflection is not suitable for images with a small silicon thickness. Sensors, the method of adjusting the optical path of light by adding diffraction elements will obviously increase the difficulty of preparing image sensors, etc.

Method used

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  • A kind of image sensor and preparation method thereof
  • A kind of image sensor and preparation method thereof
  • A kind of image sensor and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0079] Refer to attached Figure 1-3 , this embodiment provides an image sensor, such as figure 1 As shown, the image sensor of this embodiment includes a metal interconnection layer 10 , a photosensitive device layer 20 , an optical path adjustment layer 30 , a filter layer 40 and a microlens array 50 .

[0080] Such as figure 1 As shown, the photosensitive device layer 20 includes at least one photosensitive region 201 , and the photosensitive regions 201 are isolated by deep trench isolation structures 202 . In a preferred embodiment of this embodiment, at least one photosensitive area 201 may be distributed in an array.

[0081] Such as image 3 As shown, in a further embodiment of this embodiment, the photosensitive region 201 further includes a PN junction structure 203 .

[0082] The metal interconnection layer 10 is located on the lower surface of the photosensitive device layer 20 , and the metal interconnection layer 10 includes at least one metal interconnection...

Embodiment 2

[0093] This embodiment also provides an image sensor. The similarities between this embodiment and Embodiment 1 will not be repeated, and the difference lies in:

[0094] Such as figure 2 As shown, in the image sensor of this embodiment, at least one optical filter 401 further includes a peripheral oxide 403, and the peripheral oxide 403 is deposited around the metal grid 402 and covers at least one side of the metal grid 402 side wall. The peripheral oxide 403 can protect the filter 401 from metal contamination that may be caused by the metal grid.

Embodiment 3

[0096] This embodiment provides a method for preparing an image sensor, such as Figure 6 Shown, this preparation method comprises the steps:

[0097] providing a semiconductor substrate including a photosensitive device layer;

[0098] Depositing multiple layers of transparent substances sequentially above the photosensitive device layer to form an optical path adjustment layer;

[0099] A filter is placed over a transparent substance to form a filter layer; wherein,

[0100] The photosensitive device layer includes at least one photosensitive area, and the multilayer transparent substances have different refractive indices.

[0101] refer to Figure 7-12 , and again refer to figure 1 and image 3 , the preparation method of the image sensor is described in detail.

[0102] Such as Figure 7 As shown, a semiconductor substrate including a photosensitive device layer 20 is provided, and the photosensitive device layer 20 includes at least one photosensitive region 201, ...

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Abstract

The invention provides an image sensor and a preparation method thereof, comprising a photosensitive device layer, an optical path adjustment layer and a light filter layer. The photosensitive device layer includes at least one photosensitive region; the light filter layer includes at least one filter layer separated by a metal grid. Optical sheet; the optical path adjustment layer is arranged between the optical filter layer and the photosensitive device layer, including multi-layer transparent materials arranged in a stacked manner, and the refractive index of the multi-layer transparent materials decreases sequentially along the direction from the optical filter to the photosensitive device layer , so that when the infrared light is incident into the multi-layer transparent material, different degrees of refraction will occur, thereby increasing the optical path of the infrared optics, so that the photosensitive region can better absorb the infrared light. And the number of layers of transparent material can be set according to the actual optical path adjustment requirements of the image sensor, so as to better absorb and utilize infrared light according to actual needs.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an image sensor and a preparation method thereof. Background technique [0002] The quantum efficiency of an image sensor is the ratio of the amount of charge collected to the number of photons incident on the active area of ​​the image sensor (eg, a photodiode). This quantity can characterize the sensitivity of the image sensor to light. [0003] Near-infrared optical signals (that is, light with wavelengths between 700 nanometers and 1000 nanometers) have a small frequency path and low penetration ability, so the silicon in the photosensitive region of the sensor absorbs less infrared light at these wavelengths, and the quantum efficiency lower. [0004] Image sensors that can improve the absorption of infrared light exist in the prior art, such as adjusting the optical path of light in silicon through reflection phenomena, and enhancing the optical path of light throu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
Inventor 龙海凤李天慧藤井光一黄晓橹倪凌云
Owner 淮安西德工业设计有限公司
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