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Semiconductor structure and formation method thereof

A semiconductor and conductive structure technology, applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve problems such as failure and device deformation

Active Publication Date: 2019-06-04
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This can lead to internal stresses and thus distortion and failure of the device

Method used

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  • Semiconductor structure and formation method thereof
  • Semiconductor structure and formation method thereof
  • Semiconductor structure and formation method thereof

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Embodiment Construction

[0051] Various embodiments will be described in more detail below with reference to the accompanying drawings, which are for description and explanation purposes only and not for limiting purposes. For the sake of clarity, elements may not be drawn according to actual scale. Also, some elements and / or element numbers may be omitted from some drawings. It is contemplated that elements and features of one embodiment can be beneficially incorporated in another embodiment without further elaboration.

[0052] A semiconductor structure according to an embodiment includes a plurality of sub-array structures separated from each other by a plurality of isolation structures. The semiconductor structure also includes a three-dimensional array of memory cells. The storage units include a plurality of storage unit groups, which are respectively arranged in the sub-array structure. The semiconductor structure also includes a plurality of conductive structures. Each of the conductive st...

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Abstract

The invention provides a semiconductor structure which includes a plurality of sub-array structures separated from each other by a plurality of isolation structures. The semiconductor structure also includes a three-dimensional array formed by multiple storage units. The storage units include a plurality of storage unit groups disposed in secondary array structures. The semiconductor structure also includes a plurality of conductive structures. Each of the conductive structures includes a plurality of conductive columns correspondingly disposed in each of the isolation structures along the extending directions of the isolation structures. The conductive columns pass through the isolation structures one to one. Each of the conductive columns has a circular cross section.

Description

technical field [0001] The invention relates to a semiconductor structure and its forming method. In particular, the present invention relates to a semiconductor structure comprising a three-dimensional array of memory cells and a method for forming the same. Background technique [0002] For reasons of volume reduction, weight reduction, power density increase, and portability improvement, three-dimensional (3D) semiconductor structures have been developed. In a typical process for some three-dimensional semiconductor structures, a stack comprising multiple layers may be formed on a substrate, followed by forming openings through the stack and supplying suitable materials for forming vertical structures into the openings. The openings and vertical structures formed therein typically have high aspect ratios. This can lead to internal stresses and thus distortion and failure of the device. Contents of the invention [0003] The present invention is directed to a semicond...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11524H01L27/11551H01L27/1157H01L27/11578H01L23/00H10B41/35H10B41/20H10B43/20H10B43/35
Inventor 廖廷丰
Owner MACRONIX INT CO LTD
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