Layer change structure

A layer structure and base layer technology, applied in the display field, can solve the problems of easy corrosion and poor film quality, and achieve the effect of avoiding the location of steep slopes, reducing the risk of corrosion, and avoiding too steep film formation.

Active Publication Date: 2019-06-04
TRULY SEMICON
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing layer-changing structure often has poor film q

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Layer change structure
  • Layer change structure
  • Layer change structure

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0020] Example one

[0021] Such as figure 1 As shown, it shows a layer change structure provided by the present invention. The layer change structure is applied to a display panel, and includes a base layer 1, a first metal layer 2 arranged on the base layer 1, a first insulating layer 3 arranged on the first metal layer 2 and the base layer 1. , The second metal layer 4 provided on the first insulating layer 3, the second insulating layer 5 provided on the second metal layer 4 and the first insulating layer 3 and the second The ITO layer 6 on the insulating layer 5 and extending from the first metal layer 2 to the second metal layer 4; the second metal layer 4 is different from the first metal layer 2 A gap D is formed between the overlap and the second metal layer 4 so that the ITO layer 6 forms a flat section at a position corresponding to the gap D.

[0022] Specifically, in this embodiment, the first insulating layer 3 and the second insulating layer 5 are provided with via...

Example Embodiment

[0025] Example two

[0026] Such as figure 2 As shown, it shows a layer change structure provided in this embodiment. The layer change structure includes a base layer 1, a first metal layer 2 arranged on the base layer 1, a first insulating layer 3 arranged on the first metal layer 2 and the base layer 1, and a first insulating layer 3 arranged on the first metal layer 2 and the base layer 1. A second metal layer 4 on an insulating layer 3, a second insulating layer 5 and a second insulating layer 5 on the second metal layer 4 and the first insulating layer 3, and The ITO layer 6 extends from the first metal layer 2 to the second metal layer 4; the first metal layer 2 extends below the second metal layer 4.

[0027] Similar to the previous embodiment, the first insulating layer 3 and the second insulating layer 5 are provided with via holes at positions corresponding to the first metal layer 2, and the second insulating layer 5 A via hole is provided at a position corresponding ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a layer change structure, which includes a base layer, a first metal layer arranged on the base layer, a first insulating layer arranged on the first metal layer and the base layer, a second metal layer arranged on the first insulating layer, a second insulating layer on the second metal layer and the first insulating layer, and an ITO layer arranged on the second insulatinglayer and extending from the first metal layer to the second metal layer. The second metal layer does not overlap with the first metal layer and a gap is formed between the first metal layer and thesecond metal layer so that the ITO layer is flat at the position corresponding to the gap; or, the first metal layer extends to below the second metal layer. The layer change structure provided by theinvention avoids the appearance of sharp corners in the ITO layer, reduces the risk of corrosion and improves the product quality.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a layer-changing structure. Background technique [0002] With the continuous maturity and development of display technology, display panels have been widely used in various fields such as industry, household and vehicle. In display panels, multiple metal layers are often formed. For example, scanning lines are often formed through the first metal layer, while data lines are often formed through the second metal layer. Correspondingly, multiple covering metal layers are also formed. insulation layer. [0003] In the display panel, due to wiring requirements, for reasons such as bridging, it is often necessary to realize the electrical connection of different metal layers, which is generally realized by setting an ITO layer to form a layer-changing structure. However, the existing layer-changing structure often has the problem of poor film formation quality and easy corrosion d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L27/12
Inventor 于靖庄崇营李林
Owner TRULY SEMICON
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap