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an image sensor

An image sensor and conductive type technology, applied in the field of image sensors, can solve problems such as reducing the quantum efficiency of CMOS image sensors, and achieve the effect of improving quantum efficiency

Active Publication Date: 2021-04-30
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] During the working process of the existing image sensor, the photogenerated carriers of the photodiode will recombine with the substrate silicon or silicon dioxide surface in the neutral region except the depletion region, thereby reducing the quantum efficiency of the CMOS image sensor

Method used

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Embodiment Construction

[0019] Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals denote the same or similar structures in the drawings, and thus their repeated descriptions will be omitted.

[0020] The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided in order to give a thorough understanding of embodiments of the invention. However, those skilled in the art will appreciate that the technical solutions of the present invention may be practiced without one or more of the specific...

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Abstract

The present invention discloses an image sensor, which includes: a substrate; a lightly doped epitaxial layer of a first conductivity type disposed on the substrate; a transfer transistor disposed on the lightly doped epitaxial layer of the first conductivity type layer; a photodiode, arranged on the lightly doped epitaxial layer of the first conductivity type, connected to the transfer transistor, and the photodiode includes: a middle-doped layer of the second conductivity type, arranged on the first In the lightly doped epitaxial layer of the conductivity type; the lightly doped layer of the second conductivity type (32), arranged in the lightly doped epitaxial layer of the first conductivity type and located in the middle doped layer of the second conductivity type close to the One side of the substrate; a heavily doped layer of the first conductivity type (33), arranged on the side of the middle doped layer of the second conductivity type away from the substrate; a lightly doped layer of the second conductivity type (34) , disposed between the heavily doped layer of the first conductivity type and the medium doped layer of the second conductivity type.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to an image sensor. Background technique [0002] The basic unit in an image sensor is a pixel, and each pixel includes a photodiode and a MOS transistor. The photodiode is used to convert a light signal into a corresponding current signal, and the MOS transistor is used to transmit and read out the current signal converted by the photodiode. Wherein the source region of the transfer transistor is connected to the photodiode, the silicon oxide layer is above the photodiode, and the N-type doped region and the P-type doped region are sequentially formed in the direction away from the substrate of the PN photodiode. Because the surface of PN photodiode is in direct contact with the silicon / silicon oxide section, there is a disadvantage of large dark current. Therefore, in the traditional image sensor, a surface clamping structure is introduced in the image sensor to reduce the dark curre...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
Inventor 孙德明
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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