Drive device
A driving device and potential technology, applied in the direction of circuit devices, battery circuit devices, output power conversion devices, etc., can solve problems such as failure of transistor circuit components
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no. 1 Embodiment approach
[0023] Below, refer to Figure 1 ~ Figure 4 The first embodiment will be described.
[0024] figure 1 The drive device 1 shown controls the driving of transistors Q1 and Q2 interposed in series in a power supply path from a DC power supply 2 to a load 3, and is constituted as a semiconductor integrated circuit (IC).
[0025] The DC power supply 2 is, for example, a vehicle-mounted battery. A high-potential side power line L1 (hereinafter, referred to as power line L1 hereinafter) is connected to its high-potential side terminal, and a low-potential side power line L2 (hereinafter referred to as power line L1 ) is connected to its low-potential side terminal. , omitted as the power line L2). The transistors Q1 and Q2 are both N-channel MOS transistors, and have a parasitic diode (body diode) connected between the drain and the source with the source side as an anode.
[0026] The drain of the transistor Q1 is connected to the power supply line L1, and the source thereof is ...
no. 2 Embodiment approach
[0067] Below, refer to Figure 5 A second embodiment will be described.
[0068] Such as Figure 5 As shown, the driving device 21 of the present embodiment differs from the driving device 1 of the first embodiment in that a reverse connection protection control unit 22 is provided instead of the reverse connection protection control unit 6 . The reverse connection protection control unit 22 differs from the reverse connection protection control unit 6 in the configuration of the potential fixing unit. In this case, the potential fixing unit 23 includes resistors R21 to R24 and a comparator CP21.
[0069] Between the drain of the transistor Q12 and the terminal P3, a series circuit of resistors R21 and R22 and a series circuit of resistors R23 and R24 are connected, respectively. The interconnection node N21 of the resistors R21 and R22 is connected to the inverting input terminal of the comparator CP21, and the interconnection node N22 of the resistors R23 and R24 is conne...
no. 3 Embodiment approach
[0081] Hereinafter, a third embodiment will be described with reference to the drawings.
[0082] Such as Figure 6 As shown, the driving device 31 of this embodiment controls the driving of the transistors Q1 and Q31 interposed in series in the power supply path from the DC power supply 2 to the load 3 . The transistor Q31 is a P-channel MOS transistor, and includes a parasitic diode connected between the drain and the source with the drain side serving as an anode.
[0083] The drain of the transistor Q1 is connected to the power supply line L1, and the source thereof is connected to the drain of the transistor Q31. The source of the transistor Q31 is connected to the power supply line L2 via the load 3 . In this way, the transistors Q1 and Q31 are connected such that the mutual parasitic diodes are reversed. In this embodiment, the transistor Q31 corresponds to a protective MOS transistor.
[0084] The drive device 31 is different from the drive device 1 of the first em...
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