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Substrate processing system used for depositing film

A processing system and a technology for depositing films, applied in the field of substrate processing systems for seamless feature filling

Active Publication Date: 2019-08-16
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, after the coalescing of the films deposited on the sidewalls, a seam is usually left in the center of the trench

Method used

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  • Substrate processing system used for depositing film
  • Substrate processing system used for depositing film
  • Substrate processing system used for depositing film

Examples

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Embodiment Construction

[0067] The present disclosure describes systems and methods for filling features on a substrate. In some embodiments, the features are formed below field regions of the substrate. In some embodiments, seams formed in holes or trenches, such as shallow trench insulators (STIs), during gapfill are eliminated using an atomic layer deposition (ALD) process. Although STI applications have been disclosed, the invention is applicable to other applications requiring feature filling, such as, but not limited to, pre-metal dielectrics, 3D NAND, deep trenches, and the like. The systems and methods described herein enhance bottom-up feature fill during the ALD process by exposing the substrate to a suppressor plasma between at least some of the ALD cycles performed during feature fill.

[0068] In some embodiments, the features are substantially filled by ALD cycles. In other embodiments, the features are not completely filled by the ALD cycle, and other materials are used to fill the f...

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Abstract

The invention relates to inhibitor plasma mediated atomic layer deposition for seamless feature fill. Systems and methods for depositing film in a substrate processing system includes performing a first atomic layer deposition (ALD) cycle in a processing chamber to deposit film on a substrate including a feature; after the first ALD cycle, exposing the substrate to an inhibitor plasma in the processing chamber for a predetermined period to create a varying passivated surface in the feature; and after the predetermined period, performing a second ALD cycle in the processing chamber to deposit film on the substrate.

Description

[0001] This application is a divisional application of the application number 201510088812.0, the filing date is February 26, 2015, and the invention title is "Inhibitor plasma-mediated atomic layer deposition for seamless feature filling". [0002] Related Application Cross Reference [0003] This application claims the benefit of US Provisional Application No. 61 / 944,871, filed February 26, 2014. The entire disclosures of the above-referenced applications are hereby incorporated by reference. technical field [0004] The present disclosure relates to substrate processing systems, and more particularly, to substrate processing systems and methods for seamless feature filling. Background technique [0005] The background description provided herein is for the purpose of generally describing the context of the disclosure. The work of the presently listed inventors described in this Background section, as well as aspects of the specification that were not prior art at the ti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40C23C16/02C23C16/04C23C16/455C23C16/458C23C16/50C23C16/52H01J37/32H01L21/02H01L21/3205H01L21/762H01L21/768
CPCH01L21/02164H01L21/02315H01L21/76837C23C16/02C23C16/045C23C16/402C23C16/45534H01J37/32082H01J37/32449H01L21/76224C23C16/4554H01L21/0228H01L21/02274C23C16/505C23C16/45544C23C16/52H01L21/32051C23C16/45527C23C16/458C23C16/50
Inventor 唐伟巴特·范·斯查文迪克钱俊康胡阿德里安·拉瓦伊迪纳什·帕迪大卫·C·史密斯
Owner LAM RES CORP
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