Array substrate and its preparation method

Abstract

Provided is an array substrate and a preparation method thereof. The method comprises: forming a gate metal layer on a glass substrate and forming a decomposable layer, wherein the decomposable layer has different thermal decomposition temperatures before and after UV irradiation; forming a first insulating layer covering the decomposable layer; performing UV treatment on the glass substrate; heating the glass substrate to decompose the decomposable layer; forming a hollow cavity between the first insulating layer and the gate metal layer; and forming a source electrode and a drain electrode over the first insulating layer.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate and a preparation method thereof. Background technique [0002] With the gradual maturity of Thin Film Transistor-Liquid Crystal Display (TFT-LCD) technology, the demand for high resolution such as 4K / 8K and large-size 65’ / 75’ / 85’ panels is increasing. At the same time, as the size of the liquid crystal panel increases, the current transmission distance becomes larger, which eventually leads to an increase in the resistive and capacitive load of the liquid crystal panel. In order to reduce the problem of increased impedance caused by increased transmission distance, a common practice in the industry is to increase the thickness of conductive metals such as aluminum (Al) and copper (Cu). However, as the thickness of conductive metals such as Cu increases, the wet etching time needs to be prolonged, and the formed pattern also has a higher taper angle (...

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Problems solved by technology

However, as the thickness of conductive metals such as Cu increases, the wet etching time needs to be prolonged, and the formed pattern also has a higher taper angle (taper), and a higher taper angle will produce a series of negative effects such as: stress concentration leads to Gate insulating film (Gate Insulator, referred to as GI) breakdown, conductive metal copper (Cu) diffusion, electrostatic discharge (Electro-Staticdischarge, referred to as ESD), etc.

[0003] In summary, the thin film transistors in the prior art have problems such as breakdown of the gate insulating film, diffusion of conductive metal copper, and electrostatic discharge.

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