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151 results about "Ultraviolet light treatment" patented technology

Method for manufacturing high-k dielectric layer water-based indium oxide thin film transistors

The invention belongs to the technical field of manufacturing of semiconductor thin film transistors and relates to a method for manufacturing high-k dielectric layer water-based indium oxide thin film transistors. The method includes the steps that zirconium acetylacetonate is dissolved in dimethylformamide, and ethanol amine of the same molar weight as the zirconium acetylacetonate is added as a stabilizer, so that a precursor solution is formed; a sample is obtained by coating a cleaned low-resistance silicon substrate with the precursor solution in a spinning mode, and a sample obtained after light annealing is obtained by placing the sample below a high-pressure mercury lamp for ultraviolet light treatment; a thin film sample is obtained through annealing of the sample obtained after light annealing; an In2O3 channel layer is obtained by coating the surface of the obtained thin film sample with an In2O3 aqueous solution; finally, a source electrode and a drain electrode are manufactured on the In2O3 channel layer, and then the thin film transistors can be obtained. According to the overall implementation scheme, cost is low, processes are simple, the principle is reliable, product performance is good, the manufacturing process is environmentally friendly, application prospects are wide, and a feasible plan is provided for manufacturing the high-performance thin film transistors on a large scale.
Owner:QINGDAO UNIV

Ion implantation method for improving PMOS device performance

The invention provides an ion implantation method for improving PMOS device performance. The method comprises steps: at least one first transistor region and at least one second transistor region separated by an isolation area are formed on a silicon substrate, a first gate is formed on the first transistor region, and a second gate is formed on the second transistor region; a silicon nitride layer is deposited on the silicon substrate to enable the silicon nitride layer to fully cover the first transistor region, the second transistor region, the first gate and the second gate; a photoresist is applied to the silicon substrate to enable the photoresist to fully cover the first transistor region, the second transistor region, the first gate and the second gate; photoetching is carried out on the photoresist to remove the photoresist covering the first transistor region and the first gate; ultraviolet light treatment is carried out on the first transistor region; the photoresist in the second transistor region is removed; and dry etching is carried out on the silicon nitride layer so as to form side walls covering two sides of the first gate and side walls covering two sides of the second gate, and side walls at the top part of the gate and the source/drain end are etched and removed.
Owner:SHANGHAI HUALI MICROELECTRONICS CORP

Ultraviolet-light treatment instrument

The invention discloses an ultraviolet-light treatment instrument. The ultraviolet-light treatment instrument comprises a main machine (1) and a treatment cover (2). A shell (21) of the treatment cover (2) is of a cover body structure, wherein the upper end of the cover body structure is closed and the lower end of the cover body structure is open. A protection cover (25) is installed on the opening portion of the lower end of the shell (21). A radiator (22) is installed on the upper portion of an inner cavity of the shell (21), annular reflection lenses (24) are arranged on the lower portion of the inner cavity of the shell (21), are close to one another and are fixed to the inner wall of the shell (21), and an integrated circuit board (23) is arranged in the annular reflection lenses (24) and is evenly provided with a plurality of LEDs connected sequentially in series. The novel light sources adopted in the ultraviolet-light treatment instrument have the advantages that not so many materials are consumed, the service life is long, power stability is high and the spectral region is narrow. By means of controlling the distribution density of the LED light sources, the problem that light sensitivity obviously differs because of different treatment regions is also solved, and insufficient treatments or excessive treatments are effectively avoided.
Owner:CHONGQING DEMA PHOTOELECTRIC TECH
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