Amorphous carbon film processing method and opening forming method

A technology of amorphous carbon film and processing method, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of insufficient uniformity of etching speed, insufficient performance of semiconductor devices, and insufficient value, etc., to achieve The effect of uniform distribution of hydrogen atoms, improved performance, and uniform etching speed

Active Publication Date: 2013-02-06
SEMICON MFG INT (SHANGHAI) CORP
View PDF3 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in the actual etching process, the uniformity of the etching rate of the existing amorphous carbon film is not good enough, and the LER / LWR value of the opening formed by etching is not good enough, so that the performance of the semiconductor device is not good enough

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Amorphous carbon film processing method and opening forming method
  • Amorphous carbon film processing method and opening forming method
  • Amorphous carbon film processing method and opening forming method

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0052] Figure 7 It is a schematic flow chart of the method for forming an opening using the amorphous carbon film as a hard mask layer provided by the first embodiment of the present invention, including:

[0053] Step S101, providing a substrate, and a polysilicon layer is formed on the surface of the substrate;

[0054] Step S102, forming an amorphous carbon film on the surface of the polysilicon layer;

[0055] Step S103, annealing the amorphous carbon film;

[0056] Step S104, performing ultraviolet light treatment on the annealed amorphous carbon film;

[0057] Step S105, after the ultraviolet light treatment, etching the amorphous carbon film until the polysilicon layer is exposed, forming a first opening located in the central area of ​​the amorphous carbon film and a second opening located in the edge area of ​​the amorphous carbon film .

[0058] Figure 8 to Figure 10 It is a schematic cross-sectional structure diagram of the process of forming an opening with ...

no. 2 example

[0079] Figure 11 It is a schematic flow chart of the method for forming a through hole (opening) by using the amorphous carbon film as an interlayer dielectric layer according to the second embodiment of the present invention, including:

[0080] Step S201, providing a substrate, and a semiconductor structure is formed on the surface of the substrate;

[0081] Step S202, forming an amorphous carbon film covering the semiconductor structure;

[0082] Step S203, annealing the amorphous carbon film;

[0083] Step S204, performing ultraviolet light treatment on the annealed amorphous carbon film;

[0084] Step S205 , after the ultraviolet light treatment, etching the amorphous carbon film to form a first opening as a through hole exposing the semiconductor structure.

[0085] Figures 12 to 14It is a schematic cross-sectional structure diagram of the process of forming a through hole (opening) with an amorphous carbon film used as an interlayer dielectric layer provided by th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses an amorphous carbon film processing method and an opening forming method. The amorphous carbon film processing method comprises the following steps: a substrate is provided; an amorphous carbon film is formed on the surface of the substrate; the amorphous carbon film is subjected to annealing treatment; and the amorphous carbon film after the annealing treatment is subjected to ultraviolet light treatment. Through the treatment method of amorphous carbon film, provided by the invention, the distribution of hydrogen atoms in the amorphous carbon film is uniform, so that the etching speed of the amorphous carbon film is uniform, a flat and uniform etched surface in the etching process of different regions is favorably formed, and the performance of the semiconductor device is accordingly improved. Correspondingly, the invention also provides a method for forming an opening by etching the treated amorphous carbon film.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for processing an amorphous carbon film and a method for forming openings. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are constantly developing toward higher component density in order to achieve higher computing speed, larger data storage capacity, and more functions. In order to obtain a highly integrated semiconductor device, the material of the interlayer dielectric layer between the wiring layers of the existing semiconductor device is mostly a material with a low dielectric constant. [0003] Amorphous carbon (α-C:H, hydrogenated amorphous carbon) has attracted a lot of attention as a low dielectric constant material, and US Pat. No. 6,573,030 provides a method for forming an amorphous carbon film. In addition, the amorphous carbon film has been widely used as a hard mask layer material du...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L21/027
Inventor 张彬鲍宇
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap