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Transistor structure and operation method thereof

An operation method and transistor technology, applied in the direction of transistors, semiconductor devices, electrical components, etc., can solve problems such as screen brightness reduction, screen flicker, pixel structure leakage, etc., to achieve the effect of improving leakage and improving performance

Pending Publication Date: 2019-09-06
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the liquid crystal display panel is operated at low frequency, the brightness of the frame is likely to decrease due to the leakage of the pixel structure, and when the next frame is updated, the brightness will increase significantly, resulting in flicker phenomenon.

Method used

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  • Transistor structure and operation method thereof
  • Transistor structure and operation method thereof
  • Transistor structure and operation method thereof

Examples

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Embodiment Construction

[0048] The present invention will be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

[0049] In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Throughout the specification, the same reference numerals denote the same elements. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected"...

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PUM

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Abstract

The invention discloses a transistor structure and an operation method thereof, wherein the transistor structure includes a substrate, an intrinsic semiconductor layer, a gate, a first source / drain, asecond source / drain and a shielding metal layer. The intrinsic semiconductor layer is arranged on the substrate. The intrinsic semiconductor layer includes a channel part, a first transition part,a second transition part, a first contact part and a second contact part. The gate overlaps with the channel portion of the intrinsic semiconductor layer. The intrinsic semiconductor layer is locatedbetween the substrate and the gate. The first source / drain contacts the first contact of the intrinsic semiconductor layer. The second source / drain contacts the second contact part of the intrinsic semiconductor layer. The shielding metal layer is arranged between the substrate and the intrinsic semiconductor layer. The shielding metal layer includes a shielding pattern, a first shielding electrode and a second shielding electrode. The first mask electrode and the second mask electrode overlap the first transition part and the second transition part respectively. The mask pattern overlapsthe channel part.

Description

technical field [0001] The present invention relates to a transistor structure and method of operation thereof. Background technique [0002] Reducing the driving frequency of the liquid crystal display panel can achieve the effect of energy saving. However, when the liquid crystal display panel is operated at a low frequency, the brightness of the frame is likely to decrease due to the leakage of the pixel structure, and when the next frame is updated, the brightness will increase significantly, resulting in a flicker phenomenon. Contents of the invention [0003] The invention provides a transistor structure with good performance. [0004] The invention provides an operation method of a transistor structure, which can make the transistor structure have good performance. [0005] A transistor structure of the present invention includes a substrate, an intrinsic semiconductor layer, a gate, a first source / drain, a second source / drain and a shielding metal layer. The int...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786
CPCH01L29/78603H01L29/78609
Inventor 陈信学刘品妙张哲嘉陈亦伟
Owner AU OPTRONICS CORP
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